TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor

Qingzhi Meng; Qijing Lin; Weixuan Jing; Feng Han; Man Zhao; Zhuangde Jiang

doi:10.1109/TED.2018.2869291

TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor

Qingzhi Meng
, Qijing Lin
, Weixuan Jing
, Feng Han
, Man Zhao
, Zhuangde Jiang

Xi'an Jiaotong University
Shanghai Jiao Tong University
Zhejiang University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The hydrodynamic model is simplified as the drift-diffusion model for nonresonant THz detection simulation. Dependence of THz photoresponse on various structure parameters of the detector is analyzed by simulation. The two typical metrics, responsivity and noise equivalent power (NEP), are theoretically calculated for the optimization of the structure parameters. The optimized responsivity and NEP reach 5.8 kV/W and 50 pW/Hz^0.5 at the same gate voltage, respectively, and a minimum NEP of 20 pW/Hz^0.5 is obtained. The comparison between our simulation results and the experiment data of single-channel HEMT detector proves that the DC HEMT detector shows an excellent THz detection performance.

Original language	English
Article number	8470261
Pages (from-to)	4807-4813
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	11
DOIs	https://doi.org/10.1109/TED.2018.2869291
State	Published - Nov 2018

Keywords

Double channel (DC)
high-electron-mobility transistor (HEMT)
noise equivalent power (NEP)
nonresonant
photoresponse
responsivity
terahertz (THz) detector

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10.1109/TED.2018.2869291

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@article{cc1d6721d5ec4766b0c46ff86596c0bd,

title = "TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor",

abstract = "We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The hydrodynamic model is simplified as the drift-diffusion model for nonresonant THz detection simulation. Dependence of THz photoresponse on various structure parameters of the detector is analyzed by simulation. The two typical metrics, responsivity and noise equivalent power (NEP), are theoretically calculated for the optimization of the structure parameters. The optimized responsivity and NEP reach 5.8 kV/W and 50 pW/Hz0.5 at the same gate voltage, respectively, and a minimum NEP of 20 pW/Hz0.5 is obtained. The comparison between our simulation results and the experiment data of single-channel HEMT detector proves that the DC HEMT detector shows an excellent THz detection performance.",

keywords = "Double channel (DC), high-electron-mobility transistor (HEMT), noise equivalent power (NEP), nonresonant, photoresponse, responsivity, terahertz (THz) detector",

author = "Qingzhi Meng and Qijing Lin and Weixuan Jing and Feng Han and Man Zhao and Zhuangde Jiang",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

month = nov,

doi = "10.1109/TED.2018.2869291",

language = "英语",

volume = "65",

pages = "4807--4813",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor

AU - Meng, Qingzhi

AU - Lin, Qijing

AU - Jing, Weixuan

AU - Han, Feng

AU - Zhao, Man

AU - Jiang, Zhuangde

PY - 2018/11

Y1 - 2018/11

N2 - We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The hydrodynamic model is simplified as the drift-diffusion model for nonresonant THz detection simulation. Dependence of THz photoresponse on various structure parameters of the detector is analyzed by simulation. The two typical metrics, responsivity and noise equivalent power (NEP), are theoretically calculated for the optimization of the structure parameters. The optimized responsivity and NEP reach 5.8 kV/W and 50 pW/Hz0.5 at the same gate voltage, respectively, and a minimum NEP of 20 pW/Hz0.5 is obtained. The comparison between our simulation results and the experiment data of single-channel HEMT detector proves that the DC HEMT detector shows an excellent THz detection performance.

AB - We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The hydrodynamic model is simplified as the drift-diffusion model for nonresonant THz detection simulation. Dependence of THz photoresponse on various structure parameters of the detector is analyzed by simulation. The two typical metrics, responsivity and noise equivalent power (NEP), are theoretically calculated for the optimization of the structure parameters. The optimized responsivity and NEP reach 5.8 kV/W and 50 pW/Hz0.5 at the same gate voltage, respectively, and a minimum NEP of 20 pW/Hz0.5 is obtained. The comparison between our simulation results and the experiment data of single-channel HEMT detector proves that the DC HEMT detector shows an excellent THz detection performance.

KW - Double channel (DC)

KW - high-electron-mobility transistor (HEMT)

KW - noise equivalent power (NEP)

KW - nonresonant

KW - photoresponse

KW - responsivity

KW - terahertz (THz) detector

UR - https://www.scopus.com/pages/publications/85054228653

U2 - 10.1109/TED.2018.2869291

DO - 10.1109/TED.2018.2869291

M3 - 文章

AN - SCOPUS:85054228653

SN - 0018-9383

VL - 65

SP - 4807

EP - 4813

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 8470261

ER -

TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor

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Keywords

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