Switch-Off Mechanisms in GeAsTe Ovonic Threshold Switching Selector Device

  • Z. Hu
  • , Z. Chai
  • , W. Zhang
  • , Jian Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Understanding the switching process in ovonic threshold switching (OTS) devices is an important research topic. Less attention has been paid to the fast switching-off process in the past, especially in modern nanoscale OTS devices. In this work, the OTS switching-off process in 1S1Rs operations are investigate. The underlying mechanisms can be explained by the dynamic resistance of OTS induced by the transition of defect clusters, and the impact of series resistance value on the switching off process is revealed. The defect cluster shrinking stage and rupture stage can be measured and characterized, respectively, which correspond to two distinct switch-off mechanisms. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.

Original languageEnglish
Title of host publication2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
EditorsFan Ye, Xiaona Zhu, Ting Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350361834
DOIs
StatePublished - 2024
Event17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024 - Zhuhai, China
Duration: 22 Oct 202425 Oct 2024

Publication series

Name2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

Conference

Conference17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
Country/TerritoryChina
CityZhuhai
Period22/10/2425/10/24

Fingerprint

Dive into the research topics of 'Switch-Off Mechanisms in GeAsTe Ovonic Threshold Switching Selector Device'. Together they form a unique fingerprint.

Cite this