Abstract
We propose to sputter a new ternary material Nb-Si-N as the conductive film. With this ternary film composition, the film's sheet resistance can be adjusted easily to satisfy the requirement of the electro-forming process. The experiment results show that Nb-Si-N can be a kind of conductive film material for SCEs.
| Original language | English |
|---|---|
| Pages | 2005-2007 |
| Number of pages | 3 |
| State | Published - 2009 |
| Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 9 Dec 2009 → 11 Dec 2009 |
Conference
| Conference | 16th International Display Workshops, IDW '09 |
|---|---|
| Country/Territory | Japan |
| City | Miyazaki |
| Period | 9/12/09 → 11/12/09 |
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