Suppressing Nitrogen-Vacancy Centers to Enhance Performance of Diamond Ultraviolet Photodetector via Growing with Tungsten

Xiaohui Chang; Xiuliang Yan; Shuwei Fan; Jianing Su; Yan Feng Wang; Ruozheng Wang; Genqiang Chen; Juan Wang; Wei Wang; Hong Xing Wang

doi:10.1109/TED.2021.3116932

Suppressing Nitrogen-Vacancy Centers to Enhance Performance of Diamond Ultraviolet Photodetector via Growing with Tungsten

Xiaohui Chang
, Xiuliang Yan
, Shuwei Fan
, Jianing Su
, Yan Feng Wang
, Ruozheng Wang
, Genqiang Chen
, Juan Wang
, Wei Wang
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This work successfully enhanced the performance of diamond ultraviolet (UV) photodetectors (PDs) via reducing solubility of nitrogen to suppress the defects in diamond film by introducing tungsten during diamond growth. Photoluminescence spectra exhibited less defects in diamond film with tungsten introduction, whose better quality was verified by Raman spectra. PDs fabricated on this film indicated a great improvement of optical-electrical properties. Its sensitivity, responsivity under 225-nm UV radiation, and UV/visible rejection ratio were enhanced to 2, 937.5, and 4 times, respectively, compared with PD based on normal diamond.

Original language	English
Pages (from-to)	6228-6232
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	12
DOIs	https://doi.org/10.1109/TED.2021.3116932
State	Published - 1 Dec 2021

Keywords

Diamond
homoepitaxy
photodetector (PD)

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10.1109/TED.2021.3116932

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@article{fccc69b4f04a4c97aaf3c58bcb9a13c4,

title = "Suppressing Nitrogen-Vacancy Centers to Enhance Performance of Diamond Ultraviolet Photodetector via Growing with Tungsten",

abstract = "This work successfully enhanced the performance of diamond ultraviolet (UV) photodetectors (PDs) via reducing solubility of nitrogen to suppress the defects in diamond film by introducing tungsten during diamond growth. Photoluminescence spectra exhibited less defects in diamond film with tungsten introduction, whose better quality was verified by Raman spectra. PDs fabricated on this film indicated a great improvement of optical-electrical properties. Its sensitivity, responsivity under 225-nm UV radiation, and UV/visible rejection ratio were enhanced to 2, 937.5, and 4 times, respectively, compared with PD based on normal diamond.",

keywords = "Diamond, homoepitaxy, photodetector (PD)",

author = "Xiaohui Chang and Xiuliang Yan and Shuwei Fan and Jianing Su and Wang, \{Yan Feng\} and Ruozheng Wang and Genqiang Chen and Juan Wang and Wei Wang and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = dec,

day = "1",

doi = "10.1109/TED.2021.3116932",

language = "英语",

volume = "68",

pages = "6228--6232",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Suppressing Nitrogen-Vacancy Centers to Enhance Performance of Diamond Ultraviolet Photodetector via Growing with Tungsten

AU - Chang, Xiaohui

AU - Yan, Xiuliang

AU - Fan, Shuwei

AU - Su, Jianing

AU - Wang, Yan Feng

AU - Wang, Ruozheng

AU - Chen, Genqiang

AU - Wang, Juan

AU - Wang, Wei

AU - Wang, Hong Xing

PY - 2021/12/1

Y1 - 2021/12/1

N2 - This work successfully enhanced the performance of diamond ultraviolet (UV) photodetectors (PDs) via reducing solubility of nitrogen to suppress the defects in diamond film by introducing tungsten during diamond growth. Photoluminescence spectra exhibited less defects in diamond film with tungsten introduction, whose better quality was verified by Raman spectra. PDs fabricated on this film indicated a great improvement of optical-electrical properties. Its sensitivity, responsivity under 225-nm UV radiation, and UV/visible rejection ratio were enhanced to 2, 937.5, and 4 times, respectively, compared with PD based on normal diamond.

AB - This work successfully enhanced the performance of diamond ultraviolet (UV) photodetectors (PDs) via reducing solubility of nitrogen to suppress the defects in diamond film by introducing tungsten during diamond growth. Photoluminescence spectra exhibited less defects in diamond film with tungsten introduction, whose better quality was verified by Raman spectra. PDs fabricated on this film indicated a great improvement of optical-electrical properties. Its sensitivity, responsivity under 225-nm UV radiation, and UV/visible rejection ratio were enhanced to 2, 937.5, and 4 times, respectively, compared with PD based on normal diamond.

KW - Diamond

KW - homoepitaxy

KW - photodetector (PD)

UR - https://www.scopus.com/pages/publications/85117081780

U2 - 10.1109/TED.2021.3116932

DO - 10.1109/TED.2021.3116932

M3 - 文章

AN - SCOPUS:85117081780

SN - 0018-9383

VL - 68

SP - 6228

EP - 6232

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Suppressing Nitrogen-Vacancy Centers to Enhance Performance of Diamond Ultraviolet Photodetector via Growing with Tungsten

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Keywords

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