TY - JOUR
T1 - Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices
AU - Guo, Chunyan
AU - Jiang, Zhi
AU - Jiang, Dongwei
AU - Wang, Guowei
AU - Xu, Yingqiang
AU - Wang, Tao
AU - Tian, Jinshou
AU - Wu, Zhaoxin
AU - Niu, Zhichuan
N1 - Publisher Copyright:
© 2019, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/3/1
Y1 - 2019/3/1
N2 - The surface passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices(T2SLs) photodetectors employing diverse voltage and current conditions of sulfide treatment passivation was presented. The superlattices were grown on GaSb substrate by molecular beam epitaxy technology. The circle pixel devices in the diameter of 200 μm with 5 μm at mid-infrared and 14 μm at long-infrared 100% cutoff wavelength were fabricated. Compared to only SiO 2 encapsulation passivation and unpassivated detectors, the dark current density, which takes into account surface leakage current, was reduced by approximately three orders of magnitude and the R0A-product was six times higher by sulfide treatment. Besides, detectors passivated through 22 V 15 mA sulfur treated, the responsivity of was 0.95A/W and QE was 0.44 at 2.6 μm. As for the wavelength of 5.3 μm, the responsivity and QE were 1.95 A/W and 0.45 severally.
AB - The surface passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices(T2SLs) photodetectors employing diverse voltage and current conditions of sulfide treatment passivation was presented. The superlattices were grown on GaSb substrate by molecular beam epitaxy technology. The circle pixel devices in the diameter of 200 μm with 5 μm at mid-infrared and 14 μm at long-infrared 100% cutoff wavelength were fabricated. Compared to only SiO 2 encapsulation passivation and unpassivated detectors, the dark current density, which takes into account surface leakage current, was reduced by approximately three orders of magnitude and the R0A-product was six times higher by sulfide treatment. Besides, detectors passivated through 22 V 15 mA sulfur treated, the responsivity of was 0.95A/W and QE was 0.44 at 2.6 μm. As for the wavelength of 5.3 μm, the responsivity and QE were 1.95 A/W and 0.45 severally.
KW - Dual-color infrared detectors
KW - InAs/GaSb superlattices
KW - Molecular beam epitaxy
KW - Sulfide treatment passivation
UR - https://www.scopus.com/pages/publications/85062280982
U2 - 10.1007/s11082-019-1779-y
DO - 10.1007/s11082-019-1779-y
M3 - 文章
AN - SCOPUS:85062280982
SN - 0306-8919
VL - 51
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
IS - 3
M1 - 73
ER -