Sub-1 dB Gain-Ripple Compact Power Amplifier for 57-64 GHz FMCW Radar Systems in 55-nm CMOS

This paper presents a compact V-band power amplifier (PA) implemented in 55-nm bulk CMOS technology, targeting Frequency-Modulated Continuous Wave (FMCW) radar applications. The proposed design features transfer ratio modulated matching networks that simultaneously improves power-added efficiency (PAE), gain flatness, and broadband performance. The proposed PA achieves a saturated output power (Psat) of 14.4 dBm and peak PAE of 17.6%, occupying a core area of merely 0.04 mm2 with 141.6 mW dc power consumption. Post-simulation results also demonstrate it achieves 8 GHz 1-dB bandwidth centered at 59 GHz with 13.6 dB peak gain, while maintaining exceptional gain flatness below 1 dB across the entire 57-64 GHz operational band.