Study on the growth and characteristics of GSMBE of compressively strained In0.63Ga0.37As/InP quantum wells

Xiaoliang Wang; Dianzhao Sun; Meiying Kong; Xun Hou; Yiping Zeng; Jianping Li; Lingxiao Li; Shirong Zhu

Study on the growth and characteristics of GSMBE of compressively strained In_0.63Ga_0.37As/InP quantum wells

Xiaoliang Wang
, Dianzhao Sun
, Meiying Kong
, Xun Hou
, Yiping Zeng
, Jianping Li
, Lingxiao Li
, Shirong Zhu

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

Abstract

The high-quality compressively-strained quantum-wells with different well-widths (1-11nm) were grown by using the home-made GSMBE system. By means of double crystal X-ray diffraction measurement and its computer simulation, the indium composition in the wells of the sample was determined. The sharp and intense peaks for each wells can be well resolved in the 10K PL spectra. For the wells narrower than 4nm, the line widths of the peaks are smaller than the theoretical values of line width broadening due to one monolayer interface fluctuation, which shows that the interface fluctuation of the sample is within one monolayer. For wells of 7nm and 9nm in width, the peak widths are as low as 4.5meV.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Guangxue Xuebao/Acta Optica Sinica
Volume	17
Issue number	1
State	Published - Jan 1997
Externally published	Yes

Cite this

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title = "Study on the growth and characteristics of GSMBE of compressively strained In0.63Ga0.37As/InP quantum wells",

abstract = "The high-quality compressively-strained quantum-wells with different well-widths (1-11nm) were grown by using the home-made GSMBE system. By means of double crystal X-ray diffraction measurement and its computer simulation, the indium composition in the wells of the sample was determined. The sharp and intense peaks for each wells can be well resolved in the 10K PL spectra. For the wells narrower than 4nm, the line widths of the peaks are smaller than the theoretical values of line width broadening due to one monolayer interface fluctuation, which shows that the interface fluctuation of the sample is within one monolayer. For wells of 7nm and 9nm in width, the peak widths are as low as 4.5meV.",

author = "Xiaoliang Wang and Dianzhao Sun and Meiying Kong and Xun Hou and Yiping Zeng and Jianping Li and Lingxiao Li and Shirong Zhu",

year = "1997",

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T1 - Study on the growth and characteristics of GSMBE of compressively strained In0.63Ga0.37As/InP quantum wells

AU - Wang, Xiaoliang

AU - Sun, Dianzhao

AU - Kong, Meiying

AU - Hou, Xun

AU - Zeng, Yiping

AU - Li, Jianping

AU - Li, Lingxiao

AU - Zhu, Shirong

PY - 1997/1

Y1 - 1997/1

N2 - The high-quality compressively-strained quantum-wells with different well-widths (1-11nm) were grown by using the home-made GSMBE system. By means of double crystal X-ray diffraction measurement and its computer simulation, the indium composition in the wells of the sample was determined. The sharp and intense peaks for each wells can be well resolved in the 10K PL spectra. For the wells narrower than 4nm, the line widths of the peaks are smaller than the theoretical values of line width broadening due to one monolayer interface fluctuation, which shows that the interface fluctuation of the sample is within one monolayer. For wells of 7nm and 9nm in width, the peak widths are as low as 4.5meV.

AB - The high-quality compressively-strained quantum-wells with different well-widths (1-11nm) were grown by using the home-made GSMBE system. By means of double crystal X-ray diffraction measurement and its computer simulation, the indium composition in the wells of the sample was determined. The sharp and intense peaks for each wells can be well resolved in the 10K PL spectra. For the wells narrower than 4nm, the line widths of the peaks are smaller than the theoretical values of line width broadening due to one monolayer interface fluctuation, which shows that the interface fluctuation of the sample is within one monolayer. For wells of 7nm and 9nm in width, the peak widths are as low as 4.5meV.

UR - https://www.scopus.com/pages/publications/0030647371

M3 - 文章

AN - SCOPUS:0030647371

SN - 0253-2239

VL - 17

SP - 1

EP - 6

JO - Guangxue Xuebao/Acta Optica Sinica

JF - Guangxue Xuebao/Acta Optica Sinica

IS - 1

ER -

Study on the growth and characteristics of GSMBE of compressively strained In_0.63Ga_0.37As/InP quantum wells

Abstract

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