Study on the distribution of trap levels in PI by OPO laser

  • Lijuan He
  • , Dongni Wang
  • , Jinglei Cao
  • , Lei Zhao
  • , Xuan Wang
  • , Qingquan Lei

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the photo-stimulated discharge (PSD) current spectra of polyimide (PI) are obtained by the optical parametric oscillator (OPO) laser to characterize the deep space charge traps in the dielectric materials. The result shows that the energy level of charge traps in the PI film is distributed in 3.10∼4.10eV, and the main part concentrates in 3.35∼3.85eV. These data can provide experimental basis for the further research and improvement on electrical properties of materials.

Original languageEnglish
Title of host publication2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010
Pages167-169
Number of pages3
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010 - Harbin, China
Duration: 28 Jul 20101 Aug 2010

Publication series

Name2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010

Conference

Conference2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010
Country/TerritoryChina
CityHarbin
Period28/07/101/08/10

Keywords

  • Optical parametric oscillator
  • Space charge
  • Trap

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