Study on microstructure and properties of Zr-Si-N films with different nitrogen partial pressures

Jianfeng Wang; Dayan Ma; Zhongxiao Song; Wu Tang; Kewei Xu

Study on microstructure and properties of Zr-Si-N films with different nitrogen partial pressures

Jianfeng Wang
, Dayan Ma
, Zhongxiao Song
, Wu Tang
, Kewei Xu

School of Materials Science and Engineering

Xi'an Jiaotong University
University of Electronic Science and Technology of China

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Zr-Si-N films were prepared by radio frequency powered reactive magnetron sputtering at different N₂ partial pressures. The influences of N₂ partial pressure on the microstructure and properties of Zr-Si-N films were studied. The results reveal that the Zr/Si ratio decreases and the sheet resistance increases as the N₂ partial pressure increases. The microstructures of Zr-Si-N films are composed of nano-crystallite ZrN embedded into amorphous matrix of SiNx phase and a small quantity of Zr₂Si produced at low N₂ partial pressure. The appearance of Zr₂Si phase is related to the low nitridation level. The microhardness of Zr-Si-N film decreases with the increase of N₂ partial pressure at the N₂ partial pressure of 0.03 Pa, the microhardness of Zr-Si-N films is possessed of maximum value of about 22.5 GPa. The phenomenon that high N₂ partial pressure results in low microhardness in Zr-Si-N films may be related to the lattice distortion induced by the addition of Si.

Original language	English
Pages (from-to)	753-756
Number of pages	4
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	38
Issue number	5
State	Published - May 2009

Keywords

Magnetron sputtering
Microstructure
Properties
Zr-Si-N films

Cite this

@article{1abfd530d3bf4363bb2dc1e151516c97,

title = "Study on microstructure and properties of Zr-Si-N films with different nitrogen partial pressures",

abstract = "Zr-Si-N films were prepared by radio frequency powered reactive magnetron sputtering at different N2 partial pressures. The influences of N2 partial pressure on the microstructure and properties of Zr-Si-N films were studied. The results reveal that the Zr/Si ratio decreases and the sheet resistance increases as the N2 partial pressure increases. The microstructures of Zr-Si-N films are composed of nano-crystallite ZrN embedded into amorphous matrix of SiNx phase and a small quantity of Zr2Si produced at low N2 partial pressure. The appearance of Zr2Si phase is related to the low nitridation level. The microhardness of Zr-Si-N film decreases with the increase of N2 partial pressure at the N2 partial pressure of 0.03 Pa, the microhardness of Zr-Si-N films is possessed of maximum value of about 22.5 GPa. The phenomenon that high N2 partial pressure results in low microhardness in Zr-Si-N films may be related to the lattice distortion induced by the addition of Si.",

keywords = "Magnetron sputtering, Microstructure, Properties, Zr-Si-N films",

author = "Jianfeng Wang and Dayan Ma and Zhongxiao Song and Wu Tang and Kewei Xu",

year = "2009",

month = may,

language = "英语",

volume = "38",

pages = "753--756",

journal = "Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering",

issn = "1002-185X",

publisher = "Science Press ",

number = "5",

}

TY - JOUR

T1 - Study on microstructure and properties of Zr-Si-N films with different nitrogen partial pressures

AU - Wang, Jianfeng

AU - Ma, Dayan

AU - Song, Zhongxiao

AU - Tang, Wu

AU - Xu, Kewei

PY - 2009/5

Y1 - 2009/5

N2 - Zr-Si-N films were prepared by radio frequency powered reactive magnetron sputtering at different N2 partial pressures. The influences of N2 partial pressure on the microstructure and properties of Zr-Si-N films were studied. The results reveal that the Zr/Si ratio decreases and the sheet resistance increases as the N2 partial pressure increases. The microstructures of Zr-Si-N films are composed of nano-crystallite ZrN embedded into amorphous matrix of SiNx phase and a small quantity of Zr2Si produced at low N2 partial pressure. The appearance of Zr2Si phase is related to the low nitridation level. The microhardness of Zr-Si-N film decreases with the increase of N2 partial pressure at the N2 partial pressure of 0.03 Pa, the microhardness of Zr-Si-N films is possessed of maximum value of about 22.5 GPa. The phenomenon that high N2 partial pressure results in low microhardness in Zr-Si-N films may be related to the lattice distortion induced by the addition of Si.

AB - Zr-Si-N films were prepared by radio frequency powered reactive magnetron sputtering at different N2 partial pressures. The influences of N2 partial pressure on the microstructure and properties of Zr-Si-N films were studied. The results reveal that the Zr/Si ratio decreases and the sheet resistance increases as the N2 partial pressure increases. The microstructures of Zr-Si-N films are composed of nano-crystallite ZrN embedded into amorphous matrix of SiNx phase and a small quantity of Zr2Si produced at low N2 partial pressure. The appearance of Zr2Si phase is related to the low nitridation level. The microhardness of Zr-Si-N film decreases with the increase of N2 partial pressure at the N2 partial pressure of 0.03 Pa, the microhardness of Zr-Si-N films is possessed of maximum value of about 22.5 GPa. The phenomenon that high N2 partial pressure results in low microhardness in Zr-Si-N films may be related to the lattice distortion induced by the addition of Si.

KW - Magnetron sputtering

KW - Microstructure

KW - Properties

KW - Zr-Si-N films

UR - https://www.scopus.com/pages/publications/67649217191

M3 - 文章

AN - SCOPUS:67649217191

SN - 1002-185X

VL - 38

SP - 753

EP - 756

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 5

ER -

Study on microstructure and properties of Zr-Si-N films with different nitrogen partial pressures

Abstract

Keywords

Other files and links

Fingerprint

Cite this