Abstract
Zr-Si-N diffusion barrier films were deposited by reactive magnetron sputtering with different negative bias. The results reveal that the Si content and resistivity of the Zr-Si-N films decrease as negative bias increases. The crystalline phase increases with the increase of negative bias. The thermal stability of Zr-Si-N diffusion barrier was so good that Zr-Si-N diffusion barrier can effectively prevent from the diffusion of Cu.
| Original language | English |
|---|---|
| Pages (from-to) | 459-462 |
| Number of pages | 4 |
| Journal | Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering |
| Volume | 34 |
| Issue number | 3 |
| State | Published - Mar 2005 |
Keywords
- Diffusion barrier
- Thermal stability
- Zr-Si-N