Abstract
The thermal reaction of thin platinum films with large-grained aluminum substrates is studied with emphasis on the growth kinetics of the initial aluminide phase. In situ d.c. sputter cleaning is performed on the large-grained aluminum substrates before the platinum film is evaporated to ensure a clean interface. Uniform layer-by-layer growth of Pt2Al3 is observed and monitored by 2 MeV4He+ backscattering. The thickness x of this initial aluminide phase grows parabolically with the annealing duration t as x2 = Kt. After the incubation period, the growth constant K is given by K = x2 t = 8.76exp- 1.45 eV kBT (cm2s-1) for 255°C < T < 305°C.
| Original language | English |
|---|---|
| Pages (from-to) | 379-385 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 153 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - 26 Oct 1987 |
| Externally published | Yes |
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