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Study of the initial aluminide phase growth in Al/Pt couples

  • X. A. Zhao
  • , E. Ma
  • , H. Y. Yang
  • , M. A. Nicolet
  • California Institute of Technology

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The thermal reaction of thin platinum films with large-grained aluminum substrates is studied with emphasis on the growth kinetics of the initial aluminide phase. In situ d.c. sputter cleaning is performed on the large-grained aluminum substrates before the platinum film is evaporated to ensure a clean interface. Uniform layer-by-layer growth of Pt2Al3 is observed and monitored by 2 MeV4He+ backscattering. The thickness x of this initial aluminide phase grows parabolically with the annealing duration t as x2 = Kt. After the incubation period, the growth constant K is given by K = x2 t = 8.76exp- 1.45 eV kBT (cm2s-1) for 255°C < T < 305°C.

Original languageEnglish
Pages (from-to)379-385
Number of pages7
JournalThin Solid Films
Volume153
Issue number1-3
DOIs
StatePublished - 26 Oct 1987
Externally publishedYes

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