Study of channeling effect by Impact of highly charged ions on crystal surface of Si(110)

Hai Bo Peng; Tie Shan Wang; Yun Cheng Han; Da Jie Ding; He Xu; Rui Cheng; Yong Tao Zhao; Yu Yu Wang

Study of channeling effect by Impact of highly charged ions on crystal surface of Si(110)

Hai Bo Peng
, Tie Shan Wang
, Yun Cheng Han
, Da Jie Ding
, He Xu
, Rui Cheng
, Yong Tao Zhao
, Yu Yu Wang

Research output: Contribution to journal › Article › peer-review

Abstract

The (110) crystal surface of Si was bombarded by slow highly charged ions (Pb^q+, Ar^q+) and the secondary particle emission was measured for different incident angles. Comparing the relationship between the sputtering yield and the incident angle, channeling effect was suggested. The channeling effect in interaction of highly charged ions with Si causes the sputtering yield to depend strongly on kinetic energy. Highly charged ions can enhance sputtering yield at smaller incident angles. At incident angles from 40° to 50°, the higher the potential energy of highly charged ion, the greater the sputtering yield.

Original language	English
Pages (from-to)	2161-2164
Number of pages	4
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	57
Issue number	4
State	Published - Apr 2008
Externally published	Yes

Keywords

Channeling effect
Highly charged ions
Sputtering

Cite this

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title = "Study of channeling effect by Impact of highly charged ions on crystal surface of Si(110)",

abstract = "The (110) crystal surface of Si was bombarded by slow highly charged ions (Pbq+, Arq+) and the secondary particle emission was measured for different incident angles. Comparing the relationship between the sputtering yield and the incident angle, channeling effect was suggested. The channeling effect in interaction of highly charged ions with Si causes the sputtering yield to depend strongly on kinetic energy. Highly charged ions can enhance sputtering yield at smaller incident angles. At incident angles from 40° to 50°, the higher the potential energy of highly charged ion, the greater the sputtering yield.",

keywords = "Channeling effect, Highly charged ions, Sputtering",

author = "Peng, \{Hai Bo\} and Wang, \{Tie Shan\} and Han, \{Yun Cheng\} and Ding, \{Da Jie\} and He Xu and Rui Cheng and Zhao, \{Yong Tao\} and Wang, \{Yu Yu\}",

year = "2008",

month = apr,

language = "英语",

volume = "57",

pages = "2161--2164",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

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T1 - Study of channeling effect by Impact of highly charged ions on crystal surface of Si(110)

AU - Peng, Hai Bo

AU - Wang, Tie Shan

AU - Han, Yun Cheng

AU - Ding, Da Jie

AU - Xu, He

AU - Cheng, Rui

AU - Zhao, Yong Tao

AU - Wang, Yu Yu

PY - 2008/4

Y1 - 2008/4

N2 - The (110) crystal surface of Si was bombarded by slow highly charged ions (Pbq+, Arq+) and the secondary particle emission was measured for different incident angles. Comparing the relationship between the sputtering yield and the incident angle, channeling effect was suggested. The channeling effect in interaction of highly charged ions with Si causes the sputtering yield to depend strongly on kinetic energy. Highly charged ions can enhance sputtering yield at smaller incident angles. At incident angles from 40° to 50°, the higher the potential energy of highly charged ion, the greater the sputtering yield.

AB - The (110) crystal surface of Si was bombarded by slow highly charged ions (Pbq+, Arq+) and the secondary particle emission was measured for different incident angles. Comparing the relationship between the sputtering yield and the incident angle, channeling effect was suggested. The channeling effect in interaction of highly charged ions with Si causes the sputtering yield to depend strongly on kinetic energy. Highly charged ions can enhance sputtering yield at smaller incident angles. At incident angles from 40° to 50°, the higher the potential energy of highly charged ion, the greater the sputtering yield.

KW - Channeling effect

KW - Highly charged ions

KW - Sputtering

UR - https://www.scopus.com/pages/publications/42949173665

M3 - 文章

AN - SCOPUS:42949173665

SN - 1000-3290

VL - 57

SP - 2161

EP - 2164

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 4

ER -

Study of channeling effect by Impact of highly charged ions on crystal surface of Si(110)

Abstract

Keywords

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