Structures and properties of Pb(Zr,Ti)O3 thin films by metallo-organic compound decomposition process

Wei Ren; Xiao Qing Wu; Liang Ying Zhang; Xi Yao

doi:10.1080/00150199708260536

Structures and properties of Pb(Zr,Ti)O₃ thin films by metallo-organic compound decomposition process

Wei Ren
, Xiao Qing Wu
, Liang Ying Zhang
, Xi Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Structures and properties of Pb(Zr_0.Ti_0.5)O₃ thin films by metalloorganic compound decomposition (MOD) process have been investigated. PZT thin films with thickness of O 6 μm were deposited by repeating spin-coating precursor solutions and thermal annealing steps on sapphires and (111) Si wafers with or without an Al₂O₃ buffer layer and a bottom platinum electrode. The structures and morphologies of the PZT films are affected strongly by thermal treatment and substrates. PZT films have good dielectric-frequency characteristics, and their dielectric constant and loss tangent are 480 and 11% at 1 kHz respectively PZT films with remnant polarization Pr of 11.4 μ C/cm² and coercive field Ec of 80 kV/cm have been obtained.

Original language	English
Pages (from-to)	273-278
Number of pages	6
Journal	Ferroelectrics
Volume	195
Issue number	1-4
DOIs	https://doi.org/10.1080/00150199708260536
State	Published - 1997

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title = "Structures and properties of Pb(Zr,Ti)O3 thin films by metallo-organic compound decomposition process",

abstract = "Structures and properties of Pb(Zr0.Ti0.5)O3 thin films by metalloorganic compound decomposition (MOD) process have been investigated. PZT thin films with thickness of O 6 μm were deposited by repeating spin-coating precursor solutions and thermal annealing steps on sapphires and (111) Si wafers with or without an Al2O3 buffer layer and a bottom platinum electrode. The structures and morphologies of the PZT films are affected strongly by thermal treatment and substrates. PZT films have good dielectric-frequency characteristics, and their dielectric constant and loss tangent are 480 and 11\% at 1 kHz respectively PZT films with remnant polarization Pr of 11.4 μ C/cm2 and coercive field Ec of 80 kV/cm have been obtained.",

author = "Wei Ren and Wu, \{Xiao Qing\} and Zhang, \{Liang Ying\} and Xi Yao",

year = "1997",

doi = "10.1080/00150199708260536",

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pages = "273--278",

journal = "Ferroelectrics",

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T1 - Structures and properties of Pb(Zr,Ti)O3 thin films by metallo-organic compound decomposition process

AU - Ren, Wei

AU - Wu, Xiao Qing

AU - Zhang, Liang Ying

AU - Yao, Xi

PY - 1997

Y1 - 1997

N2 - Structures and properties of Pb(Zr0.Ti0.5)O3 thin films by metalloorganic compound decomposition (MOD) process have been investigated. PZT thin films with thickness of O 6 μm were deposited by repeating spin-coating precursor solutions and thermal annealing steps on sapphires and (111) Si wafers with or without an Al2O3 buffer layer and a bottom platinum electrode. The structures and morphologies of the PZT films are affected strongly by thermal treatment and substrates. PZT films have good dielectric-frequency characteristics, and their dielectric constant and loss tangent are 480 and 11% at 1 kHz respectively PZT films with remnant polarization Pr of 11.4 μ C/cm2 and coercive field Ec of 80 kV/cm have been obtained.

AB - Structures and properties of Pb(Zr0.Ti0.5)O3 thin films by metalloorganic compound decomposition (MOD) process have been investigated. PZT thin films with thickness of O 6 μm were deposited by repeating spin-coating precursor solutions and thermal annealing steps on sapphires and (111) Si wafers with or without an Al2O3 buffer layer and a bottom platinum electrode. The structures and morphologies of the PZT films are affected strongly by thermal treatment and substrates. PZT films have good dielectric-frequency characteristics, and their dielectric constant and loss tangent are 480 and 11% at 1 kHz respectively PZT films with remnant polarization Pr of 11.4 μ C/cm2 and coercive field Ec of 80 kV/cm have been obtained.

UR - https://www.scopus.com/pages/publications/0031380470

U2 - 10.1080/00150199708260536

DO - 10.1080/00150199708260536

M3 - 文章

AN - SCOPUS:0031380470

SN - 0015-0193

VL - 195

SP - 273

EP - 278

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1-4

ER -

Structures and properties of Pb(Zr,Ti)O₃ thin films by metallo-organic compound decomposition process

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