Structures and properties of doped bismuth zinc niobate cubic pyrochlore thin films prepared by pulsed laser deposition

Xiaohua Zhang; Wei Ren; Peng Shi; Aifen Tian; Xiaofeng Chen; Xiaoqing Wu; Xi Yao

doi:10.1080/00150190902869707

Structures and properties of doped bismuth zinc niobate cubic pyrochlore thin films prepared by pulsed laser deposition

Xiaohua Zhang
, Wei Ren
, Peng Shi
, Aifen Tian
, Xiaofeng Chen
, Xiaoqing Wu
, Xi Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Doped Bi2O3-ZnO-Nb2O5 (BZN) cubic pyrochlore thin films are prepared on Pt/Ti/SiO2/Si(100) substrates by pulsed laser deposition process. Dielectric properties of BZN thin films can be tailored by doping. The thin films of pure BZN and BZN doped by Ti and Ca, as well as the BZN thin films with excessive Bi2O3 and/or ZnO have been prepared. The structure, crystallinity and dielectric properties have been investigated. It's found that excessive Bi2O3 and ZnO increase dielectric constant and also loss tangent. For the doped BZN thin films, A-site Ca-substitution (Bi1.5Zn0.1Ca0.4)Nb1.5O7 films exhibit small dielectric constant of 129, while B-site Ti-substitution (Bi1.5Zn0.5) (Nb0.5Ti1.5)O7 thin films exhibit larger dielectric constant of 226.

Original language	English
Pages (from-to)	87-91
Number of pages	5
Journal	Ferroelectrics
Volume	381
Issue number	1 PART 2
DOIs	https://doi.org/10.1080/00150190902869707
State	Published - 2009
Event	6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan, Province of China Duration: 2 Aug 2008 → 6 Aug 2008

Keywords

Cubic pyrochlore structure
Dielectric property
Doped BZN thin films
Pulsed laser deposition
Tunability

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10.1080/00150190902869707

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title = "Structures and properties of doped bismuth zinc niobate cubic pyrochlore thin films prepared by pulsed laser deposition",

abstract = "Doped Bi2O3-ZnO-Nb2O5 (BZN) cubic pyrochlore thin films are prepared on Pt/Ti/SiO2/Si(100) substrates by pulsed laser deposition process. Dielectric properties of BZN thin films can be tailored by doping. The thin films of pure BZN and BZN doped by Ti and Ca, as well as the BZN thin films with excessive Bi2O3 and/or ZnO have been prepared. The structure, crystallinity and dielectric properties have been investigated. It's found that excessive Bi2O3 and ZnO increase dielectric constant and also loss tangent. For the doped BZN thin films, A-site Ca-substitution (Bi1.5Zn0.1Ca0.4)Nb1.5O7 films exhibit small dielectric constant of 129, while B-site Ti-substitution (Bi1.5Zn0.5) (Nb0.5Ti1.5)O7 thin films exhibit larger dielectric constant of 226.",

keywords = "Cubic pyrochlore structure, Dielectric property, Doped BZN thin films, Pulsed laser deposition, Tunability",

author = "Xiaohua Zhang and Wei Ren and Peng Shi and Aifen Tian and Xiaofeng Chen and Xiaoqing Wu and Xi Yao",

year = "2009",

doi = "10.1080/00150190902869707",

language = "英语",

volume = "381",

pages = "87--91",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 PART 2",

note = "6th Asian Meeting on Ferroelectrics, AMF-6 ; Conference date: 02-08-2008 Through 06-08-2008",

}

TY - JOUR

T1 - Structures and properties of doped bismuth zinc niobate cubic pyrochlore thin films prepared by pulsed laser deposition

AU - Zhang, Xiaohua

AU - Ren, Wei

AU - Shi, Peng

AU - Tian, Aifen

AU - Chen, Xiaofeng

AU - Wu, Xiaoqing

AU - Yao, Xi

PY - 2009

Y1 - 2009

N2 - Doped Bi2O3-ZnO-Nb2O5 (BZN) cubic pyrochlore thin films are prepared on Pt/Ti/SiO2/Si(100) substrates by pulsed laser deposition process. Dielectric properties of BZN thin films can be tailored by doping. The thin films of pure BZN and BZN doped by Ti and Ca, as well as the BZN thin films with excessive Bi2O3 and/or ZnO have been prepared. The structure, crystallinity and dielectric properties have been investigated. It's found that excessive Bi2O3 and ZnO increase dielectric constant and also loss tangent. For the doped BZN thin films, A-site Ca-substitution (Bi1.5Zn0.1Ca0.4)Nb1.5O7 films exhibit small dielectric constant of 129, while B-site Ti-substitution (Bi1.5Zn0.5) (Nb0.5Ti1.5)O7 thin films exhibit larger dielectric constant of 226.

AB - Doped Bi2O3-ZnO-Nb2O5 (BZN) cubic pyrochlore thin films are prepared on Pt/Ti/SiO2/Si(100) substrates by pulsed laser deposition process. Dielectric properties of BZN thin films can be tailored by doping. The thin films of pure BZN and BZN doped by Ti and Ca, as well as the BZN thin films with excessive Bi2O3 and/or ZnO have been prepared. The structure, crystallinity and dielectric properties have been investigated. It's found that excessive Bi2O3 and ZnO increase dielectric constant and also loss tangent. For the doped BZN thin films, A-site Ca-substitution (Bi1.5Zn0.1Ca0.4)Nb1.5O7 films exhibit small dielectric constant of 129, while B-site Ti-substitution (Bi1.5Zn0.5) (Nb0.5Ti1.5)O7 thin films exhibit larger dielectric constant of 226.

KW - Cubic pyrochlore structure

KW - Dielectric property

KW - Doped BZN thin films

KW - Pulsed laser deposition

KW - Tunability

UR - https://www.scopus.com/pages/publications/77949304297

U2 - 10.1080/00150190902869707

DO - 10.1080/00150190902869707

M3 - 会议文章

AN - SCOPUS:77949304297

SN - 0015-0193

VL - 381

SP - 87

EP - 91

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 2

T2 - 6th Asian Meeting on Ferroelectrics, AMF-6

Y2 - 2 August 2008 through 6 August 2008

ER -

Structures and properties of doped bismuth zinc niobate cubic pyrochlore thin films prepared by pulsed laser deposition

Abstract

Keywords

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