Structure transition and multiferroic properties of Mn-doped BiFeO 3 thin films

Wenlong Liu; Guoqiang Tan; Guohua Dong; Xia Yan; Wei Ye; Huijun Ren; Ao Xia

doi:10.1007/s10854-013-1636-x

Structure transition and multiferroic properties of Mn-doped BiFeO ₃ thin films

Wenlong Liu
, Guoqiang Tan
, Guohua Dong
, Xia Yan
, Wei Ye
, Huijun Ren
, Ao Xia

Shaanxi University of Science and Technology

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Pure BiFeO₃ (BFO) and Mn-doped BiFe_1-yMn _yO₃ thin films were prepared on FTO/glass (SnO ₂: F) substrates by using a sol-gel method. The effects of Mn-doping on the structure and electric properties of the BFO thin films were studied. The X-ray diffraction (XRD) analysis reveals a structure transition in the Mn-doped BiFe_0.96Mn_0.04O₃ (BFMO) thin film. The Rietveld refined XRD patterns conform the trigonal (R3c: H) and tetragonal (P422) symmetry for the BFO and BFMO thin films, respectively. The structure transition and the mixed valences of Mn ions substantially improve the electric properties of the BFMO thin film. The remnant polarization (P _r) of the BFMO thin film was 105.86 μC/cm² at 1 kHz in the applied electric field of 865 kV/cm. At an applied electric field of 150 kV/cm, the leakage current density of BFMO thin film is 1.42 × 10^-5 A/cm². It is about two orders of magnitude lower than that of the pure BFO thin film (1.25 × 10^-3 A/cm²). And the enhanced saturated magnetization of the BFMO thin film is 4.45 emu/cm ³.

Original language	English
Pages (from-to)	723-729
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	2
DOIs	https://doi.org/10.1007/s10854-013-1636-x
State	Published - Feb 2014
Externally published	Yes

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@article{d4c79d7ec7504a6cb3b54bec80db9e26,

title = "Structure transition and multiferroic properties of Mn-doped BiFeO 3 thin films",

abstract = "Pure BiFeO3 (BFO) and Mn-doped BiFe1-yMn yO3 thin films were prepared on FTO/glass (SnO 2: F) substrates by using a sol-gel method. The effects of Mn-doping on the structure and electric properties of the BFO thin films were studied. The X-ray diffraction (XRD) analysis reveals a structure transition in the Mn-doped BiFe0.96Mn0.04O3 (BFMO) thin film. The Rietveld refined XRD patterns conform the trigonal (R3c: H) and tetragonal (P422) symmetry for the BFO and BFMO thin films, respectively. The structure transition and the mixed valences of Mn ions substantially improve the electric properties of the BFMO thin film. The remnant polarization (P r) of the BFMO thin film was 105.86 μC/cm2 at 1 kHz in the applied electric field of 865 kV/cm. At an applied electric field of 150 kV/cm, the leakage current density of BFMO thin film is 1.42 × 10-5 A/cm2. It is about two orders of magnitude lower than that of the pure BFO thin film (1.25 × 10-3 A/cm2). And the enhanced saturated magnetization of the BFMO thin film is 4.45 emu/cm 3.",

author = "Wenlong Liu and Guoqiang Tan and Guohua Dong and Xia Yan and Wei Ye and Huijun Ren and Ao Xia",

year = "2014",

month = feb,

doi = "10.1007/s10854-013-1636-x",

language = "英语",

volume = "25",

pages = "723--729",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Structure transition and multiferroic properties of Mn-doped BiFeO 3 thin films

AU - Liu, Wenlong

AU - Tan, Guoqiang

AU - Dong, Guohua

AU - Yan, Xia

AU - Ye, Wei

AU - Ren, Huijun

AU - Xia, Ao

PY - 2014/2

Y1 - 2014/2

N2 - Pure BiFeO3 (BFO) and Mn-doped BiFe1-yMn yO3 thin films were prepared on FTO/glass (SnO 2: F) substrates by using a sol-gel method. The effects of Mn-doping on the structure and electric properties of the BFO thin films were studied. The X-ray diffraction (XRD) analysis reveals a structure transition in the Mn-doped BiFe0.96Mn0.04O3 (BFMO) thin film. The Rietveld refined XRD patterns conform the trigonal (R3c: H) and tetragonal (P422) symmetry for the BFO and BFMO thin films, respectively. The structure transition and the mixed valences of Mn ions substantially improve the electric properties of the BFMO thin film. The remnant polarization (P r) of the BFMO thin film was 105.86 μC/cm2 at 1 kHz in the applied electric field of 865 kV/cm. At an applied electric field of 150 kV/cm, the leakage current density of BFMO thin film is 1.42 × 10-5 A/cm2. It is about two orders of magnitude lower than that of the pure BFO thin film (1.25 × 10-3 A/cm2). And the enhanced saturated magnetization of the BFMO thin film is 4.45 emu/cm 3.

AB - Pure BiFeO3 (BFO) and Mn-doped BiFe1-yMn yO3 thin films were prepared on FTO/glass (SnO 2: F) substrates by using a sol-gel method. The effects of Mn-doping on the structure and electric properties of the BFO thin films were studied. The X-ray diffraction (XRD) analysis reveals a structure transition in the Mn-doped BiFe0.96Mn0.04O3 (BFMO) thin film. The Rietveld refined XRD patterns conform the trigonal (R3c: H) and tetragonal (P422) symmetry for the BFO and BFMO thin films, respectively. The structure transition and the mixed valences of Mn ions substantially improve the electric properties of the BFMO thin film. The remnant polarization (P r) of the BFMO thin film was 105.86 μC/cm2 at 1 kHz in the applied electric field of 865 kV/cm. At an applied electric field of 150 kV/cm, the leakage current density of BFMO thin film is 1.42 × 10-5 A/cm2. It is about two orders of magnitude lower than that of the pure BFO thin film (1.25 × 10-3 A/cm2). And the enhanced saturated magnetization of the BFMO thin film is 4.45 emu/cm 3.

UR - https://www.scopus.com/pages/publications/84894053265

U2 - 10.1007/s10854-013-1636-x

DO - 10.1007/s10854-013-1636-x

M3 - 文章

AN - SCOPUS:84894053265

SN - 0957-4522

VL - 25

SP - 723

EP - 729

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 2

ER -

Structure transition and multiferroic properties of Mn-doped BiFeO ₃ thin films

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