Structure of ordered oxide on InAs(100) surface

M. P.J. Punkkinen; P. Laukkanen; J. Lång; M. Kuzmin; J. Dahl; H. L. Zhang; M. Pessa; M. Guina; L. Vitos; K. Kokko

doi:10.1016/j.susc.2012.07.028

Structure of ordered oxide on InAs(100) surface

M. P.J. Punkkinen
, P. Laukkanen
, J. Lång
, M. Kuzmin
, J. Dahl
, H. L. Zhang
, M. Pessa
, M. Guina
, L. Vitos
, K. Kokko

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3 × 1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable InOIn trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 × 1) reconstruction than within the competing (2 × 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.

Original language	English
Pages (from-to)	1837-1841
Number of pages	5
Journal	Surface Science
Volume	606
Issue number	23-24
DOIs	https://doi.org/10.1016/j.susc.2012.07.028
State	Published - Dec 2012
Externally published	Yes

Keywords

Ab initio calculations
Indium arsenide
Oxide
Surface reconstruction

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10.1016/j.susc.2012.07.028

Cite this

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title = "Structure of ordered oxide on InAs(100) surface",

abstract = "It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3 × 1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable InOIn trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 × 1) reconstruction than within the competing (2 × 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.",

keywords = "Ab initio calculations, Indium arsenide, Oxide, Surface reconstruction",

author = "Punkkinen, \{M. P.J.\} and P. Laukkanen and J. L{\aa}ng and M. Kuzmin and J. Dahl and Zhang, \{H. L.\} and M. Pessa and M. Guina and L. Vitos and K. Kokko",

year = "2012",

month = dec,

doi = "10.1016/j.susc.2012.07.028",

language = "英语",

volume = "606",

pages = "1837--1841",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Structure of ordered oxide on InAs(100) surface

AU - Punkkinen, M. P.J.

AU - Laukkanen, P.

AU - Lång, J.

AU - Kuzmin, M.

AU - Dahl, J.

AU - Zhang, H. L.

AU - Pessa, M.

AU - Guina, M.

AU - Vitos, L.

AU - Kokko, K.

PY - 2012/12

Y1 - 2012/12

N2 - It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3 × 1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable InOIn trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 × 1) reconstruction than within the competing (2 × 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.

AB - It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3 × 1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable InOIn trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 × 1) reconstruction than within the competing (2 × 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.

KW - Ab initio calculations

KW - Indium arsenide

KW - Oxide

KW - Surface reconstruction

UR - https://www.scopus.com/pages/publications/84866355020

U2 - 10.1016/j.susc.2012.07.028

DO - 10.1016/j.susc.2012.07.028

M3 - 文章

AN - SCOPUS:84866355020

SN - 0039-6028

VL - 606

SP - 1837

EP - 1841

JO - Surface Science

JF - Surface Science

IS - 23-24

ER -

Structure of ordered oxide on InAs(100) surface

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Keywords

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