Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

Z. D. Sha; X. M. Wu; L. J. Zhuge

doi:10.1016/j.vacuum.2005.04.003

Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

Z. D. Sha
, X. M. Wu
, L. J. Zhuge

Soochow University

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.

Original language	English
Pages (from-to)	250-254
Number of pages	5
Journal	Vacuum
Volume	79
Issue number	3-4
DOIs	https://doi.org/10.1016/j.vacuum.2005.04.003
State	Published - 19 Aug 2005
Externally published	Yes

Keywords

Annealing temperature
Magnetron sputtering
Photoluminescence
SiC films

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10.1016/j.vacuum.2005.04.003

Cite this

@article{c6eed693d6e2471295be98b0a6a5e8fc,

title = "Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique",

abstract = "SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.",

keywords = "Annealing temperature, Magnetron sputtering, Photoluminescence, SiC films",

author = "Sha, \{Z. D.\} and Wu, \{X. M.\} and Zhuge, \{L. J.\}",

year = "2005",

month = aug,

day = "19",

doi = "10.1016/j.vacuum.2005.04.003",

language = "英语",

volume = "79",

pages = "250--254",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

number = "3-4",

}

TY - JOUR

T1 - Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

AU - Sha, Z. D.

AU - Wu, X. M.

AU - Zhuge, L. J.

PY - 2005/8/19

Y1 - 2005/8/19

N2 - SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.

AB - SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.

KW - Annealing temperature

KW - Magnetron sputtering

KW - Photoluminescence

KW - SiC films

UR - https://www.scopus.com/pages/publications/22544452747

U2 - 10.1016/j.vacuum.2005.04.003

DO - 10.1016/j.vacuum.2005.04.003

M3 - 文章

AN - SCOPUS:22544452747

SN - 0042-207X

VL - 79

SP - 250

EP - 254

JO - Vacuum

JF - Vacuum

IS - 3-4

ER -

Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

Abstract

Keywords

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