Structure and electrical properties of multilayer PZT films prepared by sol-gel processing

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Abstract

Multilayer PZT(Zr:Ti = 52:48) films were prepared by the repeated process of spin-coating and firing at 600 °C of a PZT sol with various heating rates between 20 and 200 °C min-1. Their structural and dielectric properties were examined. The multilayer film prepared with the heating rate of 50 °C min-1 shows the highest dielectric constant and a smooth surface with no surface cracks. High-resolution TEM (HRTEM) observations of an as-deposited PZT film indicate nucleation of perovskite and pyrochlore crystals in the amorphous matrix. The perovskite crystals are found to form through the initial construction of {110} planes.

Original languageEnglish
Pages (from-to)501-506
Number of pages6
JournalCeramics International
Volume26
Issue number5
DOIs
StatePublished - 16 Jun 2000
Externally publishedYes

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