Abstract
High dose nitrogen implantation was carried out in gadolinium, cobalt, aluminium and copper thin films to study the implantation-induced phase formation. It is concluded that the presence or absence of an equilibrium nitride after implantation is directly related to the structural correlation between the metal matrix and the nitride. The formation of a nitride would be retarded or even inhibited if the required structural transformation is difficult to achieve. These results are believed to be attributable to the transient thermodynamic and kinetic conditions during ion irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 49-55 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 147 |
| Issue number | 1 |
| DOIs | |
| State | Published - 16 Feb 1987 |
| Externally published | Yes |
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