Structural, dielectric and ferroelectric properties of Ti-Modified 0.72BiFeO3-0.28PbTiO3 multiferroic thin films prepared by pulsed laser deposition

Ling Chen; Wei Ren; Weimin Zhu; Zuo Guang Ye; Peng Shi; Xiaofeng Chen; Xiaoqing Wu; Xi Yao

doi:10.1080/00150193.2010.492058

Structural, dielectric and ferroelectric properties of Ti-Modified 0.72BiFeO₃-0.28PbTiO₃ multiferroic thin films prepared by pulsed laser deposition

Ling Chen
, Wei Ren
, Weimin Zhu
, Zuo Guang Ye
, Peng Shi
, Xiaofeng Chen
, Xiaoqing Wu
, Xi Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
Simon Fraser University

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Ti-modified 0.72BiFeO₃-0.28PbTiO₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition under different oxygen pressures from 2 Pa to 15 Pa. The microstructures and electrical properties were investigated. Tetragonal (001) preferential orientation was observed in all films under different oxygen atmosphere pressures. The electrical properties of the thin films have been investigated for various deposition conditions. The dielectric constant and double remanent polarization were found to be 550 and 80 μC/cm², respectively, for the thin film deposited at an oxygen atmosphere of 10 Pa and a substrate temperature of 680°C.

Original language	English
Pages (from-to)	42-49
Number of pages	8
Journal	Ferroelectrics
Volume	410
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.492058
State	Published - 2011
Event	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China Duration: 23 Aug 2009 → 27 Aug 2009

Keywords

Dielectric and ferroelectric properties
Pulsed laser deposition
Ti modified 0.72BiFeO-0.28PbTiO thin films

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10.1080/00150193.2010.492058

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title = "Structural, dielectric and ferroelectric properties of Ti-Modified 0.72BiFeO3-0.28PbTiO3 multiferroic thin films prepared by pulsed laser deposition",

abstract = "Ti-modified 0.72BiFeO3-0.28PbTiO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition under different oxygen pressures from 2 Pa to 15 Pa. The microstructures and electrical properties were investigated. Tetragonal (001) preferential orientation was observed in all films under different oxygen atmosphere pressures. The electrical properties of the thin films have been investigated for various deposition conditions. The dielectric constant and double remanent polarization were found to be 550 and 80 μC/cm2, respectively, for the thin film deposited at an oxygen atmosphere of 10 Pa and a substrate temperature of 680°C.",

keywords = "Dielectric and ferroelectric properties, Pulsed laser deposition, Ti modified 0.72BiFeO-0.28PbTiO thin films",

author = "Ling Chen and Wei Ren and Weimin Zhu and Ye, \{Zuo Guang\} and Peng Shi and Xiaofeng Chen and Xiaoqing Wu and Xi Yao",

year = "2011",

doi = "10.1080/00150193.2010.492058",

language = "英语",

volume = "410",

pages = "42--49",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 ; Conference date: 23-08-2009 Through 27-08-2009",

}

TY - JOUR

T1 - Structural, dielectric and ferroelectric properties of Ti-Modified 0.72BiFeO3-0.28PbTiO3 multiferroic thin films prepared by pulsed laser deposition

AU - Chen, Ling

AU - Ren, Wei

AU - Zhu, Weimin

AU - Ye, Zuo Guang

AU - Shi, Peng

AU - Chen, Xiaofeng

AU - Wu, Xiaoqing

AU - Yao, Xi

PY - 2011

Y1 - 2011

N2 - Ti-modified 0.72BiFeO3-0.28PbTiO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition under different oxygen pressures from 2 Pa to 15 Pa. The microstructures and electrical properties were investigated. Tetragonal (001) preferential orientation was observed in all films under different oxygen atmosphere pressures. The electrical properties of the thin films have been investigated for various deposition conditions. The dielectric constant and double remanent polarization were found to be 550 and 80 μC/cm2, respectively, for the thin film deposited at an oxygen atmosphere of 10 Pa and a substrate temperature of 680°C.

AB - Ti-modified 0.72BiFeO3-0.28PbTiO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition under different oxygen pressures from 2 Pa to 15 Pa. The microstructures and electrical properties were investigated. Tetragonal (001) preferential orientation was observed in all films under different oxygen atmosphere pressures. The electrical properties of the thin films have been investigated for various deposition conditions. The dielectric constant and double remanent polarization were found to be 550 and 80 μC/cm2, respectively, for the thin film deposited at an oxygen atmosphere of 10 Pa and a substrate temperature of 680°C.

KW - Dielectric and ferroelectric properties

KW - Pulsed laser deposition

KW - Ti modified 0.72BiFeO-0.28PbTiO thin films

UR - https://www.scopus.com/pages/publications/79951763325

U2 - 10.1080/00150193.2010.492058

DO - 10.1080/00150193.2010.492058

M3 - 会议文章

AN - SCOPUS:79951763325

SN - 0015-0193

VL - 410

SP - 42

EP - 49

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

ER -

Structural, dielectric and ferroelectric properties of Ti-Modified 0.72BiFeO₃-0.28PbTiO₃ multiferroic thin films prepared by pulsed laser deposition

Abstract

Keywords

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