Structural and optical properties of N-doped β-Ga2O 3 films deposited by RF magnetron sputtering

Yijun Zhang; Jinliang Yan; Qingshan Li; Chong Qu; Liying Zhang; Ting Li

doi:10.1016/j.physb.2011.05.011

Structural and optical properties of N-doped β-Ga₂O ₃ films deposited by RF magnetron sputtering

Yijun Zhang
, Jinliang Yan
, Qingshan Li
, Chong Qu
, Liying Zhang
, Ting Li

Ludong University

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The N-doped β-Ga₂O₃ lms were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga₂O₃ films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed.

Original language	English
Pages (from-to)	3079-3082
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	406
Issue number	15-16
DOIs	https://doi.org/10.1016/j.physb.2011.05.011
State	Published - Aug 2011
Externally published	Yes

Keywords

N-doped β-GaO
Optical band gap
Post-annealed
RF magnetron sputtering
Transparent conductive oxide

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10.1016/j.physb.2011.05.011

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title = "Structural and optical properties of N-doped β-Ga2O 3 films deposited by RF magnetron sputtering",

abstract = "The N-doped β-Ga2O3 lms were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0\% to 30\%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga2O3 films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed.",

keywords = "N-doped β-GaO, Optical band gap, Post-annealed, RF magnetron sputtering, Transparent conductive oxide",

author = "Yijun Zhang and Jinliang Yan and Qingshan Li and Chong Qu and Liying Zhang and Ting Li",

year = "2011",

month = aug,

doi = "10.1016/j.physb.2011.05.011",

language = "英语",

volume = "406",

pages = "3079--3082",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "15-16",

}

TY - JOUR

T1 - Structural and optical properties of N-doped β-Ga2O 3 films deposited by RF magnetron sputtering

AU - Zhang, Yijun

AU - Yan, Jinliang

AU - Li, Qingshan

AU - Qu, Chong

AU - Zhang, Liying

AU - Li, Ting

PY - 2011/8

Y1 - 2011/8

N2 - The N-doped β-Ga2O3 lms were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga2O3 films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed.

AB - The N-doped β-Ga2O3 lms were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga2O3 films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed.

KW - N-doped β-GaO

KW - Optical band gap

KW - Post-annealed

KW - RF magnetron sputtering

KW - Transparent conductive oxide

UR - https://www.scopus.com/pages/publications/79957975552

U2 - 10.1016/j.physb.2011.05.011

DO - 10.1016/j.physb.2011.05.011

M3 - 文章

AN - SCOPUS:79957975552

SN - 0921-4526

VL - 406

SP - 3079

EP - 3082

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 15-16

ER -

Structural and optical properties of N-doped β-Ga₂O ₃ films deposited by RF magnetron sputtering

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Keywords

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