Structural and electric response of ITO/In2O3 transparent thin film thermocouples derived from RF sputtering at room temperature

Junzhan Zhang; Weichao Wang; Dan Liu; Ying Zhang; Peng Shi

doi:10.1007/s10854-018-0158-y

Structural and electric response of ITO/In₂O₃ transparent thin film thermocouples derived from RF sputtering at room temperature

Junzhan Zhang
, Weichao Wang
, Dan Liu
, Ying Zhang
, Peng Shi

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Transparent thin film thermocouples have unique characteristics that it can be applied when permit minimal optical interference at in-situ temperature measurement. ITO/In₂O₃ thin film thermocouples were prepared on fused quartz glasses at room temperature by RF magnetron sputtering. For contrast, ITO thin films post-annealed at different temperatures were investigated accordingly. All films showed good conductivities, smooth surface morphology and high transmission, indicating negligible affection of the post-annealing temperature. The as-deposited ITO film has a Seebeck coefficient of 84.4 µV ºC⁻¹. The thermoelectric voltage of 13.6 mV and significantly lower drift rate of 2.39 °C h⁻¹ were obtained at 190 °C for ITO/In₂O₃ thin film thermocouples without any heat treatment. This makes the ITO/In₂O₃ transparent thin film thermocouples great potential as a promising temperature sensor.

Original language	English
Pages (from-to)	20253-20259
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	29
Issue number	23
DOIs	https://doi.org/10.1007/s10854-018-0158-y
State	Published - 1 Dec 2018

Access to Document

10.1007/s10854-018-0158-y

Cite this

@article{2a86513efbf649dfb64cb6c4cad960c3,

title = "Structural and electric response of ITO/In2O3 transparent thin film thermocouples derived from RF sputtering at room temperature",

abstract = "Transparent thin film thermocouples have unique characteristics that it can be applied when permit minimal optical interference at in-situ temperature measurement. ITO/In2O3 thin film thermocouples were prepared on fused quartz glasses at room temperature by RF magnetron sputtering. For contrast, ITO thin films post-annealed at different temperatures were investigated accordingly. All films showed good conductivities, smooth surface morphology and high transmission, indicating negligible affection of the post-annealing temperature. The as-deposited ITO film has a Seebeck coefficient of 84.4 µV ºC−1. The thermoelectric voltage of 13.6 mV and significantly lower drift rate of 2.39 °C h−1 were obtained at 190 °C for ITO/In2O3 thin film thermocouples without any heat treatment. This makes the ITO/In2O3 transparent thin film thermocouples great potential as a promising temperature sensor.",

author = "Junzhan Zhang and Weichao Wang and Dan Liu and Ying Zhang and Peng Shi",

note = "Publisher Copyright: {\textcopyright} 2018, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2018",

month = dec,

day = "1",

doi = "10.1007/s10854-018-0158-y",

language = "英语",

volume = "29",

pages = "20253--20259",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "23",

}

TY - JOUR

T1 - Structural and electric response of ITO/In2O3 transparent thin film thermocouples derived from RF sputtering at room temperature

AU - Zhang, Junzhan

AU - Wang, Weichao

AU - Liu, Dan

AU - Zhang, Ying

AU - Shi, Peng

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Transparent thin film thermocouples have unique characteristics that it can be applied when permit minimal optical interference at in-situ temperature measurement. ITO/In2O3 thin film thermocouples were prepared on fused quartz glasses at room temperature by RF magnetron sputtering. For contrast, ITO thin films post-annealed at different temperatures were investigated accordingly. All films showed good conductivities, smooth surface morphology and high transmission, indicating negligible affection of the post-annealing temperature. The as-deposited ITO film has a Seebeck coefficient of 84.4 µV ºC−1. The thermoelectric voltage of 13.6 mV and significantly lower drift rate of 2.39 °C h−1 were obtained at 190 °C for ITO/In2O3 thin film thermocouples without any heat treatment. This makes the ITO/In2O3 transparent thin film thermocouples great potential as a promising temperature sensor.

AB - Transparent thin film thermocouples have unique characteristics that it can be applied when permit minimal optical interference at in-situ temperature measurement. ITO/In2O3 thin film thermocouples were prepared on fused quartz glasses at room temperature by RF magnetron sputtering. For contrast, ITO thin films post-annealed at different temperatures were investigated accordingly. All films showed good conductivities, smooth surface morphology and high transmission, indicating negligible affection of the post-annealing temperature. The as-deposited ITO film has a Seebeck coefficient of 84.4 µV ºC−1. The thermoelectric voltage of 13.6 mV and significantly lower drift rate of 2.39 °C h−1 were obtained at 190 °C for ITO/In2O3 thin film thermocouples without any heat treatment. This makes the ITO/In2O3 transparent thin film thermocouples great potential as a promising temperature sensor.

UR - https://www.scopus.com/pages/publications/85054783094

U2 - 10.1007/s10854-018-0158-y

DO - 10.1007/s10854-018-0158-y

M3 - 文章

AN - SCOPUS:85054783094

SN - 0957-4522

VL - 29

SP - 20253

EP - 20259

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 23

ER -

Structural and electric response of ITO/In₂O₃ transparent thin film thermocouples derived from RF sputtering at room temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this