Abstract
The residual stresses in Pt/PZT/Pt thin-film stack coated on an oxidized Si substrate for micro-actuator were investigated. The thin-film stack was prepared with sputtering Pt/Ti films as bottom and top electrodes, and with sol-gel coating of PbZr 0.52 Ti 0.48 O 3 (PZT) film using a three-step heat-treatment process. The residual stresses in the film stack were then measured from the changes in the radius of curvature of the wafer. The Pt/Ti electrodes effect strongly to the residual stress in the thin-film stack and the largest stress was found after the first PZT layer's coating ( ≈ - 700 MPa, compressive) because of the simultaneous annealing of the Pt/Ti bottom electrode. The residual stress decreased from the second PZT layer's coating, and finally showed a compressive stress ( ≈ - 150 MPa) in the whole Pt/PZT/Pt thin-film stack.
| Original language | English |
|---|---|
| Pages (from-to) | 83-88 |
| Number of pages | 6 |
| Journal | Ferroelectrics |
| Volume | 273 |
| DOIs | |
| State | Published - 1 Jan 2002 |
| Externally published | Yes |
Keywords
- PZT
- Residual stress
- Sol-gel
- Thin-film stack