Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films

Weilin Zhang; Fei Ma; Tianwei Zhang; Kewei Xu

doi:10.1016/j.tsf.2011.01.398

Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films

Weilin Zhang
, Fei Ma
, Tianwei Zhang
, Kewei Xu

School of Materials Science and Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC).

Original language	English
Pages (from-to)	708-711
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2011.01.398
State	Published - 1 Nov 2011

Keywords

Crystallization
Stress
Thin film

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10.1016/j.tsf.2011.01.398

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title = "Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films",

abstract = "Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC).",

keywords = "Crystallization, Stress, Thin film",

author = "Weilin Zhang and Fei Ma and Tianwei Zhang and Kewei Xu",

year = "2011",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2011.01.398",

language = "英语",

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T1 - Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films

AU - Zhang, Weilin

AU - Ma, Fei

AU - Zhang, Tianwei

AU - Xu, Kewei

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC).

AB - Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC).

KW - Crystallization

KW - Stress

KW - Thin film

UR - https://www.scopus.com/pages/publications/80755140664

U2 - 10.1016/j.tsf.2011.01.398

DO - 10.1016/j.tsf.2011.01.398

M3 - 文章

AN - SCOPUS:80755140664

SN - 0040-6090

VL - 520

SP - 708

EP - 711

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films

Abstract

Keywords

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