Strain relaxation in epitaxial SrRuO3 thin films on LaAlO 3 substrates

M. Gao; H. Du; C. R. Ma; M. Liu; G. Collins; Y. M. Zhang; C. Dai; C. L. Chen; Y. Lin

doi:10.1063/1.4823593

Strain relaxation in epitaxial SrRuO₃ thin films on LaAlO ₃ substrates

M. Gao
, H. Du
, C. R. Ma
, M. Liu
, G. Collins
, Y. M. Zhang
, C. Dai
, C. L. Chen
, Y. Lin

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Strain relaxation behavior of epitaxial SrRuO₃ thin films on (001) LaAlO₃ substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO₃ thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes.

Original language	English
Article number	141901
Journal	Applied Physics Letters
Volume	103
Issue number	14
DOIs	https://doi.org/10.1063/1.4823593
State	Published - 30 Sep 2013
Externally published	Yes

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title = "Strain relaxation in epitaxial SrRuO3 thin films on LaAlO 3 substrates",

abstract = "Strain relaxation behavior of epitaxial SrRuO3 thin films on (001) LaAlO3 substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO3 thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes.",

author = "M. Gao and H. Du and Ma, \{C. R.\} and M. Liu and G. Collins and Zhang, \{Y. M.\} and C. Dai and Chen, \{C. L.\} and Y. Lin",

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AU - Gao, M.

AU - Du, H.

AU - Ma, C. R.

AU - Liu, M.

AU - Collins, G.

AU - Zhang, Y. M.

AU - Dai, C.

AU - Chen, C. L.

AU - Lin, Y.

PY - 2013/9/30

Y1 - 2013/9/30

N2 - Strain relaxation behavior of epitaxial SrRuO3 thin films on (001) LaAlO3 substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO3 thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes.

AB - Strain relaxation behavior of epitaxial SrRuO3 thin films on (001) LaAlO3 substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO3 thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes.

UR - https://www.scopus.com/pages/publications/84885654513

U2 - 10.1063/1.4823593

DO - 10.1063/1.4823593

M3 - 文章

AN - SCOPUS:84885654513

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141901

ER -

Strain relaxation in epitaxial SrRuO₃ thin films on LaAlO ₃ substrates

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