Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber

Due to the paradigm shift of the avionic industry towards more electric aircraft (MEA) and zero carbon emission, the cryogenic power system is drawing much interest recently to maximize power density and efficiency. As a central component of power electronics, one needs to probe the performance of semiconductor power devices under a cryogenic environment to effectively integrate the converter circuits into the superconducting machines. This paper presents a simplified characterization and modeling technique for two different Gallium Nitride High Electron Mobility Transistors (GaN HEMT) of different voltage ratings at cryogenic temperatures. Two commercial GaN HEMTs (100V GS61008P and 600V PGA26E07BA) have been characterized. The electrical characteristics set have been utilized to implement a compact model in the Saber® platform. A temperature binning approach has been chosen in order to include the temperature dependence in the derived model. Two different power converter circuits have been simulated to calculate and compare the conduction power losses. This model-based design optimization will explore the potential of GaN HEMTs in cryogenic applications and pave the way for fully electric future aircraft technology.