Stacking fault-mediated ultrastrong nanocrystalline Ti thin films

K. Wu; J. Y. Zhang; G. Li; Y. Q. Wang; J. C. Cui; G. Liu; J. Sun

doi:10.1088/1361-6528/aa887f

Stacking fault-mediated ultrastrong nanocrystalline Ti thin films

K. Wu
, J. Y. Zhang
, G. Li
, Y. Q. Wang
, J. C. Cui
, G. Liu
, J. Sun

School of Materials Science and Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ∼20 GPa nm^1/2, to an ultrahigh strength of ∼4.4 GPa, approaching ∼50% of its ideal strength.

Original language	English
Article number	445706
Journal	Nanotechnology
Volume	28
Issue number	44
DOIs	https://doi.org/10.1088/1361-6528/aa887f
State	Published - 6 Oct 2017

Keywords

Hall-Petch relation
nanostructured Ti thin films
size effects
stacking faults
strengthening mechanism

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10.1088/1361-6528/aa887f

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title = "Stacking fault-mediated ultrastrong nanocrystalline Ti thin films",

abstract = "In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ∼20 GPa nm1/2, to an ultrahigh strength of ∼4.4 GPa, approaching ∼50\% of its ideal strength.",

keywords = "Hall-Petch relation, nanostructured Ti thin films, size effects, stacking faults, strengthening mechanism",

author = "K. Wu and Zhang, \{J. Y.\} and G. Li and Wang, \{Y. Q.\} and Cui, \{J. C.\} and G. Liu and J. Sun",

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T1 - Stacking fault-mediated ultrastrong nanocrystalline Ti thin films

AU - Wu, K.

AU - Zhang, J. Y.

AU - Li, G.

AU - Wang, Y. Q.

AU - Cui, J. C.

AU - Liu, G.

AU - Sun, J.

PY - 2017/10/6

Y1 - 2017/10/6

N2 - In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ∼20 GPa nm1/2, to an ultrahigh strength of ∼4.4 GPa, approaching ∼50% of its ideal strength.

AB - In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ∼20 GPa nm1/2, to an ultrahigh strength of ∼4.4 GPa, approaching ∼50% of its ideal strength.

KW - Hall-Petch relation

KW - nanostructured Ti thin films

KW - size effects

KW - stacking faults

KW - strengthening mechanism

UR - https://www.scopus.com/pages/publications/85032193349

U2 - 10.1088/1361-6528/aa887f

DO - 10.1088/1361-6528/aa887f

M3 - 文章

C2 - 28840852

AN - SCOPUS:85032193349

SN - 0957-4484

VL - 28

JO - Nanotechnology

JF - Nanotechnology

IS - 44

M1 - 445706

ER -

Stacking fault-mediated ultrastrong nanocrystalline Ti thin films

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Keywords

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