Solution-processed p-doped hole-transport layer and its application in organic light-emitting diodes

Xinwen Zhang; Zhaoxin Wu; Dawei Wang; Dongdong Wang; Runlin He; Xun Hou

doi:10.1016/j.apsusc.2010.01.076

Solution-processed p-doped hole-transport layer and its application in organic light-emitting diodes

Xinwen Zhang
, Zhaoxin Wu
, Dawei Wang
, Dongdong Wang
, Runlin He
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We investigate p-type doping poly(9-vinylcarbazole) (PVK) hole-transport layer (HTL) with tetrafluoro-tetracyano-quinodimethane introduced via cosolution. We found that the performances of devices with doped HTLs are significantly improved. The efficiency and lifetime of the p-doped device are 2.3 and 3.7 times as large as that of the control device with pure PVK as a HTL. Furthermore, the turn-on voltage of the device is reduced from 9.5 to 3.6 V by using a p-doped HTL. These improved properties are attributed to the formation of the charge-transfer complex in the HTL, which increases hole injection and conductivity of p-doped films considerably.

Original language	English
Pages (from-to)	4468-4472
Number of pages	5
Journal	Applied Surface Science
Volume	256
Issue number	14
DOIs	https://doi.org/10.1016/j.apsusc.2010.01.076
State	Published - 1 May 2010

Keywords

Organic light-emitting diodes
Solution-processed
Stability
p-Doped hole-transport layer

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10.1016/j.apsusc.2010.01.076

Cite this

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title = "Solution-processed p-doped hole-transport layer and its application in organic light-emitting diodes",

abstract = "We investigate p-type doping poly(9-vinylcarbazole) (PVK) hole-transport layer (HTL) with tetrafluoro-tetracyano-quinodimethane introduced via cosolution. We found that the performances of devices with doped HTLs are significantly improved. The efficiency and lifetime of the p-doped device are 2.3 and 3.7 times as large as that of the control device with pure PVK as a HTL. Furthermore, the turn-on voltage of the device is reduced from 9.5 to 3.6 V by using a p-doped HTL. These improved properties are attributed to the formation of the charge-transfer complex in the HTL, which increases hole injection and conductivity of p-doped films considerably.",

keywords = "Organic light-emitting diodes, Solution-processed, Stability, p-Doped hole-transport layer",

author = "Xinwen Zhang and Zhaoxin Wu and Dawei Wang and Dongdong Wang and Runlin He and Xun Hou",

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TY - JOUR

T1 - Solution-processed p-doped hole-transport layer and its application in organic light-emitting diodes

AU - Zhang, Xinwen

AU - Wu, Zhaoxin

AU - Wang, Dawei

AU - Wang, Dongdong

AU - He, Runlin

AU - Hou, Xun

PY - 2010/5/1

Y1 - 2010/5/1

N2 - We investigate p-type doping poly(9-vinylcarbazole) (PVK) hole-transport layer (HTL) with tetrafluoro-tetracyano-quinodimethane introduced via cosolution. We found that the performances of devices with doped HTLs are significantly improved. The efficiency and lifetime of the p-doped device are 2.3 and 3.7 times as large as that of the control device with pure PVK as a HTL. Furthermore, the turn-on voltage of the device is reduced from 9.5 to 3.6 V by using a p-doped HTL. These improved properties are attributed to the formation of the charge-transfer complex in the HTL, which increases hole injection and conductivity of p-doped films considerably.

AB - We investigate p-type doping poly(9-vinylcarbazole) (PVK) hole-transport layer (HTL) with tetrafluoro-tetracyano-quinodimethane introduced via cosolution. We found that the performances of devices with doped HTLs are significantly improved. The efficiency and lifetime of the p-doped device are 2.3 and 3.7 times as large as that of the control device with pure PVK as a HTL. Furthermore, the turn-on voltage of the device is reduced from 9.5 to 3.6 V by using a p-doped HTL. These improved properties are attributed to the formation of the charge-transfer complex in the HTL, which increases hole injection and conductivity of p-doped films considerably.

KW - Organic light-emitting diodes

KW - Solution-processed

KW - Stability

KW - p-Doped hole-transport layer

UR - https://www.scopus.com/pages/publications/77950691982

U2 - 10.1016/j.apsusc.2010.01.076

DO - 10.1016/j.apsusc.2010.01.076

M3 - 文章

AN - SCOPUS:77950691982

SN - 0169-4332

VL - 256

SP - 4468

EP - 4472

JO - Applied Surface Science

JF - Applied Surface Science

IS - 14

ER -

Solution-processed p-doped hole-transport layer and its application in organic light-emitting diodes

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Keywords

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