Simulations on 4H-SiC-based Vertical PN⁻PN-structure Radiation Detectors with Internal Gain

Haozhe Wang; Liang Chen; Runhua Huang; Zhuo Chen; Leidang Zhou; Xiaoping Ouyang

doi:10.12450/j.gtdzx.202602004

Simulations on 4H-SiC-based Vertical PN⁻PN-structure Radiation Detectors with Internal Gain

Haozhe Wang
, Liang Chen
, Runhua Huang
, Zhuo Chen
, Leidang Zhou
, Xiaoping Ouyang

Xi'an Jiaotong University
Northwest Institute of Nuclear Technology
Nanjing Electronic Devices Institute

Research output: Contribution to journal › Article › peer-review

Abstract

4H-silicon carbide (4H-SiC)-based NPN bipolar radiation detectors have achieved an internal gain of 10. However, enhancing the gain property remains challenging due to the constraints imposed by the product of carrier mobility and lifetime of the SiC material. To address this issue and obtain a higher internal gain, an optimized PN-PN-based radiation detector was proposed in this paper, which could be interpreted as a cascaded NPN-PNP topological structure. Technology computer-aided design (TCAD) Sentaurus simulations demonstrate that the optimized PN-PN detector exhibits a gain twice that of the NPN detector, with a recovery time of 31.37 ms. Additionally, the gain-limiting factors and operational modes of the optimized PN-PN radiation detector were thoroughly discussed.

Translated title of the contribution	具有内增益特性的4H-SiC基PN⁻PN垂直结构半导体辐射探测器仿真研究
Original language	English
Article number	2004
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	46
Issue number	2
DOIs	https://doi.org/10.12450/j.gtdzx.202602004
State	Published - 25 Apr 2026
Externally published	Yes

Keywords

gain
radiation detector
SiC
TCAD simulation

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10.12450/j.gtdzx.202602004

Cite this

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title = "Simulations on 4H-SiC-based Vertical PN⁻PN-structure Radiation Detectors with Internal Gain",

abstract = "4H-silicon carbide (4H-SiC)-based NPN bipolar radiation detectors have achieved an internal gain of 10. However, enhancing the gain property remains challenging due to the constraints imposed by the product of carrier mobility and lifetime of the SiC material. To address this issue and obtain a higher internal gain, an optimized PN-PN-based radiation detector was proposed in this paper, which could be interpreted as a cascaded NPN-PNP topological structure. Technology computer-aided design (TCAD) Sentaurus simulations demonstrate that the optimized PN-PN detector exhibits a gain twice that of the NPN detector, with a recovery time of 31.37 ms. Additionally, the gain-limiting factors and operational modes of the optimized PN-PN radiation detector were thoroughly discussed.",

keywords = "gain, radiation detector, SiC, TCAD simulation",

author = "Haozhe Wang and Liang Chen and Runhua Huang and Zhuo Chen and Leidang Zhou and Xiaoping Ouyang",

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doi = "10.12450/j.gtdzx.202602004",

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TY - JOUR

T1 - Simulations on 4H-SiC-based Vertical PN⁻PN-structure Radiation Detectors with Internal Gain

AU - Wang, Haozhe

AU - Chen, Liang

AU - Huang, Runhua

AU - Chen, Zhuo

AU - Zhou, Leidang

AU - Ouyang, Xiaoping

PY - 2026/4/25

Y1 - 2026/4/25

N2 - 4H-silicon carbide (4H-SiC)-based NPN bipolar radiation detectors have achieved an internal gain of 10. However, enhancing the gain property remains challenging due to the constraints imposed by the product of carrier mobility and lifetime of the SiC material. To address this issue and obtain a higher internal gain, an optimized PN-PN-based radiation detector was proposed in this paper, which could be interpreted as a cascaded NPN-PNP topological structure. Technology computer-aided design (TCAD) Sentaurus simulations demonstrate that the optimized PN-PN detector exhibits a gain twice that of the NPN detector, with a recovery time of 31.37 ms. Additionally, the gain-limiting factors and operational modes of the optimized PN-PN radiation detector were thoroughly discussed.

AB - 4H-silicon carbide (4H-SiC)-based NPN bipolar radiation detectors have achieved an internal gain of 10. However, enhancing the gain property remains challenging due to the constraints imposed by the product of carrier mobility and lifetime of the SiC material. To address this issue and obtain a higher internal gain, an optimized PN-PN-based radiation detector was proposed in this paper, which could be interpreted as a cascaded NPN-PNP topological structure. Technology computer-aided design (TCAD) Sentaurus simulations demonstrate that the optimized PN-PN detector exhibits a gain twice that of the NPN detector, with a recovery time of 31.37 ms. Additionally, the gain-limiting factors and operational modes of the optimized PN-PN radiation detector were thoroughly discussed.

KW - gain

KW - radiation detector

KW - SiC

KW - TCAD simulation

UR - https://www.scopus.com/pages/publications/105038002925

U2 - 10.12450/j.gtdzx.202602004

DO - 10.12450/j.gtdzx.202602004

M3 - 文章

AN - SCOPUS:105038002925

SN - 1000-3819

VL - 46

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 2

M1 - 2004

ER -

Simulations on 4H-SiC-based Vertical PN⁻PN-structure Radiation Detectors with Internal Gain

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Keywords

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