Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

Y. G. Xiao; Z. J. Chen; M. H. Tang; Z. H. Tang; S. A. Yan; J. C. Li; X. C. Gu; Y. C. Zhou; X. P. Ouyang

doi:10.1063/1.4772982

Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

Y. G. Xiao
, Z. J. Chen
, M. H. Tang
, Z. H. Tang
, S. A. Yan
, J. C. Li
, X. C. Gu
, Y. C. Zhou
, X. P. Ouyang

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of I_ON. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs.

Original language	English
Article number	253511
Journal	Applied Physics Letters
Volume	101
Issue number	25
DOIs	https://doi.org/10.1063/1.4772982
State	Published - 17 Dec 2012
Externally published	Yes

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title = "Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors",

abstract = "The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of ION. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs.",

author = "Xiao, \{Y. G.\} and Chen, \{Z. J.\} and Tang, \{M. H.\} and Tang, \{Z. H.\} and Yan, \{S. A.\} and Li, \{J. C.\} and Gu, \{X. C.\} and Zhou, \{Y. C.\} and Ouyang, \{X. P.\}",

year = "2012",

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doi = "10.1063/1.4772982",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

AU - Xiao, Y. G.

AU - Chen, Z. J.

AU - Tang, M. H.

AU - Tang, Z. H.

AU - Yan, S. A.

AU - Li, J. C.

AU - Gu, X. C.

AU - Zhou, Y. C.

AU - Ouyang, X. P.

PY - 2012/12/17

Y1 - 2012/12/17

N2 - The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of ION. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs.

AB - The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of ION. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs.

UR - https://www.scopus.com/pages/publications/84871746013

U2 - 10.1063/1.4772982

DO - 10.1063/1.4772982

M3 - 文章

AN - SCOPUS:84871746013

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253511

ER -

Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

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