Simulation calculation of partial discharge in single void using variable void resistance model

In order to simulate different breakdown processes and different time processes of partial discharge (PD) in voids, the variable void resistance model based on the physical inherence of PD in voids was used. Three different discharge processes (void breakdown, interface discharge of void, breakdown and interface discharge at the same time) and three different breakdown time processes (microsecond order, sub-nanosecond order, and nanosecond order) were studied respectively to obtain their discharge properties. Moreover, electron avalanche in discharge process was simulated. The discrepancies among PD waveforms of different discharge processes and different breakdown time were found. The simulation results under the condition of electron avalanche are very similar to the measured waveforms, which is the foundation of further studies on the physical and chemical process of PD.