Significant enhancement in breakdown strength and energy density of the BaTiO₃/BaTiO₃@SiO₂ layered ceramics with strong interface blocking effect

The BaTiO₃/BaTiO₃@SiO₂ (BT/BTS) ceramics with layered structure, where grain size was about 1–2 μm in the BT layer while it was about 300–400 nm in the BTS layer, were fabricated by the tape-casting and lamination method. With the increasing of SiO₂ content in the BTS layer, the dielectric constant decreased gradually, and the breakdown strength was remarkably improved. Compared to the SiO₂-added BaTiO₃ bulk ceramics, the layered ceramics displayed significant enhancements in dielectric properties, breakdown properties and energy storage properties. The enhancement in dielectric properties was mostly attributed to the diluting effects created by this structure to SiO₂. Based on the finite element analysis with the dielectric breakdown mode, it was regarded that the electric field redistribution and the interface blocking effect led to the enhancement of breakdown strength. Finally, the maximum energy density of 1.8 J/cm³ was obtained at a breakdown strength of 301.4 kV/cm for the BT/BTS3 ceramic.