Abstract
Bismuth telluride thin films were prepared on flexible substrates by magnetron sputtering and then annealed at different temperatures. Interestingly, single-crystal Bi2Te3 nanoplates emerged on the thin films spontaneously, free of any template or catalyst. The self-formation of nanoplates could be ascribed to thermal stress, and a physical mechanism was proposed accordingly. Thermoelectric measurements illustrated that the electronic conductivity increased with annealing temperature owing to the gradually improved crystallization, but the thermal conductivity decreased as a result of enhanced scattering by the lamellar structure. This improved the figure of merit ZT of the Bi2Te3 thin films by more than 4 times and provided us a new concept to obtain high-performance thermoelectric materials.
| Original language | English |
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| Pages (from-to) | 31668-31674 |
| Number of pages | 7 |
| Journal | RSC Advances |
| Volume | 6 |
| Issue number | 38 |
| DOIs | |
| State | Published - 2016 |