Abstract
The zinc oxide (ZnO) nanocrystal seeds layer was firstly deposited on an indium tin oxide (ITO) glass substrate by magnetron sputtering, and then the aligned ZnO nanowire arrays was synthesized at 80°C through a hot solution method. The gold (Au), silver (Ag) and aluminum (Al) metal films were deposited on the surface of the fabricated ZnO nanowire films, respectively, to fabricate three metal-semiconductor-metal (MSM) structures. The I-V characteristics for the three MSM junctions were investigated. The results show that the ZnO nanocrystal seeding layer is essential for the self-assembly growth of the ZnO nanowire arrays. The strong ultraviolet band emission peak of the nanowire arrays is observed in the measured photoluminescence spectra at room-temperature. The characteristics of the Au-ZnO nanowires MSM junction subject to the Ohmic contact property and the Ag- and Al-ZnO nanowires ones are similar to the Schottky-barrier contact function.
| Original language | English |
|---|---|
| Pages (from-to) | 17-20 |
| Number of pages | 4 |
| Journal | Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society |
| Volume | 38 |
| Issue number | 1 |
| State | Published - Jan 2010 |
Keywords
- Assembly growth
- Metal-semiconductor contact
- Zinc oxide nanowire