RTN in GexSe1-x OTS selector devices

Zheng Chai; Weidong Zhang; Robin Degraeve; Jian Fu Zhang; John Marsland; Andrea Fantini; Daniele Garbin; Sergiu Clima; Ludovic Goux; Gouri Sankar Kar

doi:10.1016/j.mee.2019.110990

RTN in Ge_xSe_1-x OTS selector devices

Zheng Chai
, Weidong Zhang
, Robin Degraeve
, Jian Fu Zhang
, John Marsland
, Andrea Fantini
, Daniele Garbin
, Sergiu Clima
, Ludovic Goux
, Gouri Sankar Kar

Liverpool John Moores University
Interuniversitair Micro-Elektronica Centrum

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Random telegraph noise (RTN)signals in Ge_xSe_1-x ovonic threshold switching (OTS)selector have been analysed in this work, both before and after the first-fire (FF)operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in Ge_xSe_1-x OTS selector is smaller than or equivalent to those in RRAM devices.

Original language	English
Article number	110990
Journal	Microelectronic Engineering
Volume	215
DOIs	https://doi.org/10.1016/j.mee.2019.110990
State	Published - 15 Jul 2019
Externally published	Yes

Keywords

Defects
Filament
OTS
RRAM
Random telegraph noise
Selector

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10.1016/j.mee.2019.110990

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@article{98949ed3143e43f795ec036f1989e65a,

title = "RTN in GexSe1-x OTS selector devices",

abstract = "Random telegraph noise (RTN)signals in GexSe1-x ovonic threshold switching (OTS)selector have been analysed in this work, both before and after the first-fire (FF)operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in GexSe1-x OTS selector is smaller than or equivalent to those in RRAM devices.",

keywords = "Defects, Filament, OTS, RRAM, Random telegraph noise, Selector",

author = "Zheng Chai and Weidong Zhang and Robin Degraeve and Zhang, \{Jian Fu\} and John Marsland and Andrea Fantini and Daniele Garbin and Sergiu Clima and Ludovic Goux and Kar, \{Gouri Sankar\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jul,

day = "15",

doi = "10.1016/j.mee.2019.110990",

language = "英语",

volume = "215",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - RTN in GexSe1-x OTS selector devices

AU - Chai, Zheng

AU - Zhang, Weidong

AU - Degraeve, Robin

AU - Zhang, Jian Fu

AU - Marsland, John

AU - Fantini, Andrea

AU - Garbin, Daniele

AU - Clima, Sergiu

AU - Goux, Ludovic

AU - Kar, Gouri Sankar

PY - 2019/7/15

Y1 - 2019/7/15

N2 - Random telegraph noise (RTN)signals in GexSe1-x ovonic threshold switching (OTS)selector have been analysed in this work, both before and after the first-fire (FF)operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in GexSe1-x OTS selector is smaller than or equivalent to those in RRAM devices.

AB - Random telegraph noise (RTN)signals in GexSe1-x ovonic threshold switching (OTS)selector have been analysed in this work, both before and after the first-fire (FF)operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in GexSe1-x OTS selector is smaller than or equivalent to those in RRAM devices.

KW - Defects

KW - Filament

KW - OTS

KW - RRAM

KW - Random telegraph noise

KW - Selector

UR - https://www.scopus.com/pages/publications/85065871622

U2 - 10.1016/j.mee.2019.110990

DO - 10.1016/j.mee.2019.110990

M3 - 文章

AN - SCOPUS:85065871622

SN - 0167-9317

VL - 215

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 110990

ER -

RTN in Ge_xSe_1-x OTS selector devices

Abstract

Keywords

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