RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism

Z. Chai; J. Ma; W. Zhang; B. Govoreanu; E. Simoen; J. F. Zhang; Z. Ji; R. Gao; G. Groeseneken; M. Jurczak

doi:10.1109/VLSIT.2016.7573402

RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO₂RRAM switching operation and failure mechanism

Z. Chai
, J. Ma
, W. Zhang
, B. Govoreanu
, E. Simoen
, J. F. Zhang
, Z. Ji
, R. Gao
, G. Groeseneken
, M. Jurczak

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

26 Scopus citations

Abstract

For the first time, an RTN based defect tracking technique has been developed that can monitor the defect movement and filament alteration in RRAM devices. Critical filament region has been identified during switching operation at various conditions and new endurance failure mechanism is revealed. This technique provides a useful tool for RRAM technology development.

Original language	English
Title of host publication	2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509006373
DOIs	https://doi.org/10.1109/VLSIT.2016.7573402
State	Published - 21 Sep 2016
Externally published	Yes
Event	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States Duration: 13 Jun 2016 → 16 Jun 2016

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2016-September
ISSN (Print)	0743-1562

Conference

Conference	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
Country/Territory	United States
City	Honolulu
Period	13/06/16 → 16/06/16

Access to Document

10.1109/VLSIT.2016.7573402

Cite this

Chai, Z., Ma, J., Zhang, W., Govoreanu, B., Simoen, E., Zhang, J. F., Ji, Z., Gao, R., Groeseneken, G., & Jurczak, M. (2016). RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO₂RRAM switching operation and failure mechanism. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 Article 7573402 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2016.7573402

Chai, Z. ; Ma, J. ; Zhang, W. et al. / RTN-based defect tracking technique : Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO₂RRAM switching operation and failure mechanism. 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{4496deb744bb4e7c8523a98153aa4983,

title = "RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism",

abstract = "For the first time, an RTN based defect tracking technique has been developed that can monitor the defect movement and filament alteration in RRAM devices. Critical filament region has been identified during switching operation at various conditions and new endurance failure mechanism is revealed. This technique provides a useful tool for RRAM technology development.",

author = "Z. Chai and J. Ma and W. Zhang and B. Govoreanu and E. Simoen and Zhang, \{J. F.\} and Z. Ji and R. Gao and G. Groeseneken and M. Jurczak",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 ; Conference date: 13-06-2016 Through 16-06-2016",

year = "2016",

month = sep,

day = "21",

doi = "10.1109/VLSIT.2016.7573402",

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Chai, Z, Ma, J, Zhang, W, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G & Jurczak, M 2016, RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO₂RRAM switching operation and failure mechanism. in 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016., 7573402, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, Honolulu, United States, 13/06/16. https://doi.org/10.1109/VLSIT.2016.7573402

RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO₂RRAM switching operation and failure mechanism. / Chai, Z.; Ma, J.; Zhang, W. et al.
2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7573402 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang JF et al. RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO₂RRAM switching operation and failure mechanism. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7573402. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2016.7573402