Room-temperature bonding of Si wafers to Pt films on SiO2 or LiNbO3 substrates using Ar-beam surface activation

Hideki Takagi; Ryutaro Maeda; Naoe Hosoda; Tadatomo Suga

doi:10.1143/jjap.38.l1559

Room-temperature bonding of Si wafers to Pt films on SiO₂ or LiNbO₃ substrates using Ar-beam surface activation

Hideki Takagi
, Ryutaro Maeda
, Naoe Hosoda
, Tadatomo Suga

School of Instrument Science and Technology

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We have developed a method to bond Si wafers to Pt films on SiO₂ or LiNbO₃ substrates at room temperature. Ar beam etching is used to remove contaminants from the surfaces of the Si wafers and the Pt films, and the surfaces become activated. Strong bonding between Si and Pt is achieved without any heat treatment. Low-temperature chemical reaction between Si and Pt is assumed to play a role in the bonding process. This method enables the integration of diverse materials. Many applications of Pt film buried between two wafers are also expected.

Original language	English
Pages (from-to)	L1559-L1561
Journal	Japanese Journal of Applied Physics
Volume	38
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.38.l1559
State	Published - 1999

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title = "Room-temperature bonding of Si wafers to Pt films on SiO2 or LiNbO3 substrates using Ar-beam surface activation",

abstract = "We have developed a method to bond Si wafers to Pt films on SiO2 or LiNbO3 substrates at room temperature. Ar beam etching is used to remove contaminants from the surfaces of the Si wafers and the Pt films, and the surfaces become activated. Strong bonding between Si and Pt is achieved without any heat treatment. Low-temperature chemical reaction between Si and Pt is assumed to play a role in the bonding process. This method enables the integration of diverse materials. Many applications of Pt film buried between two wafers are also expected.",

author = "Hideki Takagi and Ryutaro Maeda and Naoe Hosoda and Tadatomo Suga",

year = "1999",

doi = "10.1143/jjap.38.l1559",

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pages = "L1559--L1561",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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T1 - Room-temperature bonding of Si wafers to Pt films on SiO2 or LiNbO3 substrates using Ar-beam surface activation

AU - Takagi, Hideki

AU - Maeda, Ryutaro

AU - Hosoda, Naoe

AU - Suga, Tadatomo

PY - 1999

Y1 - 1999

N2 - We have developed a method to bond Si wafers to Pt films on SiO2 or LiNbO3 substrates at room temperature. Ar beam etching is used to remove contaminants from the surfaces of the Si wafers and the Pt films, and the surfaces become activated. Strong bonding between Si and Pt is achieved without any heat treatment. Low-temperature chemical reaction between Si and Pt is assumed to play a role in the bonding process. This method enables the integration of diverse materials. Many applications of Pt film buried between two wafers are also expected.

AB - We have developed a method to bond Si wafers to Pt films on SiO2 or LiNbO3 substrates at room temperature. Ar beam etching is used to remove contaminants from the surfaces of the Si wafers and the Pt films, and the surfaces become activated. Strong bonding between Si and Pt is achieved without any heat treatment. Low-temperature chemical reaction between Si and Pt is assumed to play a role in the bonding process. This method enables the integration of diverse materials. Many applications of Pt film buried between two wafers are also expected.

UR - https://www.scopus.com/pages/publications/0033316412

U2 - 10.1143/jjap.38.l1559

DO - 10.1143/jjap.38.l1559

M3 - 文章

AN - SCOPUS:0033316412

SN - 0021-4922

VL - 38

SP - L1559-L1561

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 B

ER -

Room-temperature bonding of Si wafers to Pt films on SiO₂ or LiNbO₃ substrates using Ar-beam surface activation

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