Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer

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Abstract

For solving the heat dissipation of high-power GaN devices, GaN was bonded on diamond at room temperature by using Mo/Au nano-adhesion layer. For a bonded GaN-on-diamond sample, the voidage is less than 3.0%, and the tensile strength reaches 6.8 MPa.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22
Number of pages1
ISBN (Electronic)9784904743072
DOIs
StatePublished - May 2019
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 21 May 201925 May 2019

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/TerritoryJapan
CityKanazawa, Ishikawa
Period21/05/1925/05/19

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