TY - JOUR
T1 - Robust Stability of Efficient Lead-Free Formamidinium Tin Iodide Perovskite Solar Cells Realized by Structural Regulation
AU - Gao, Weiyin
AU - Ran, Chenxin
AU - Li, Jingrui
AU - Dong, Hua
AU - Jiao, Bo
AU - Zhang, Lijun
AU - Lan, Xuguang
AU - Hou, Xun
AU - Wu, Zhaoxin
N1 - Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/12/20
Y1 - 2018/12/20
N2 - The instability issue of Pb-free Sn-based perovskite is one of the biggest challenges for its application in optoelectronic devices. Herein, a structural regulation strategy is demonstrated to regulate the geometric symmetry of formamidiniumtin iodide (FASnI 3 ) perovskite. Experimental and theoretical works show that the introduction of cesium cation (Cs + ) could improve the geometric symmetry, suppress the oxidation of Sn 2+ , and enhance the thermodynamical structural stability of FASnI 3 . As a result, the inverted planar Cs-doped FASnI 3 -based perovskite solar cell (PSC) is shown to maintain 90% of its initial power-conversion efficiency (PCE) after 2000 h stored in N 2 , which is the best durability to date for 3D Sn-based PSCs. Most importantly, the air, thermal, and illumination stabilities of the PSCs are all improved after Cs doping. The PCE of the Cs-doped PSC shows a 63% increase compared to that of the control device (from 3.74% to 6.08%) due to the improved quality of the Cs-doped FASnI 3 film.
AB - The instability issue of Pb-free Sn-based perovskite is one of the biggest challenges for its application in optoelectronic devices. Herein, a structural regulation strategy is demonstrated to regulate the geometric symmetry of formamidiniumtin iodide (FASnI 3 ) perovskite. Experimental and theoretical works show that the introduction of cesium cation (Cs + ) could improve the geometric symmetry, suppress the oxidation of Sn 2+ , and enhance the thermodynamical structural stability of FASnI 3 . As a result, the inverted planar Cs-doped FASnI 3 -based perovskite solar cell (PSC) is shown to maintain 90% of its initial power-conversion efficiency (PCE) after 2000 h stored in N 2 , which is the best durability to date for 3D Sn-based PSCs. Most importantly, the air, thermal, and illumination stabilities of the PSCs are all improved after Cs doping. The PCE of the Cs-doped PSC shows a 63% increase compared to that of the control device (from 3.74% to 6.08%) due to the improved quality of the Cs-doped FASnI 3 film.
UR - https://www.scopus.com/pages/publications/85058076988
U2 - 10.1021/acs.jpclett.8b03194
DO - 10.1021/acs.jpclett.8b03194
M3 - 文章
C2 - 30499301
AN - SCOPUS:85058076988
SN - 1948-7185
VL - 9
SP - 6999
EP - 7006
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 24
ER -