RF performance of hydrogenated single crystal diamond MOSFETs

Cui Yu; Chuangjie Zhou; Jianchao Guo; Zezhao He; Qingbin Liu; Xuedong Gao; Xiongwen Zhang; Zhihong Feng; Hongxing Wang

doi:10.1109/EDSSC.2019.8754272

RF performance of hydrogenated single crystal diamond MOSFETs

Cui Yu
, Chuangjie Zhou
, Jianchao Guo
, Zezhao He
, Qingbin Liu
, Xuedong Gao
, Xiongwen Zhang
, Zhihong Feng
, Hongxing Wang

Faculty of Electronic and Information Engineering

Hebei Semiconductor Research Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

14 Scopus citations

Abstract

Hydrogenated diamond MOSFETs with gate length of 350 nm are fabricated by a self-aligned process on (001)-oriented single crystal diamond substrate. The hydrogen-terminated diamond MOSFETs show maximum drain current density of 233 mA/mm at V_GS=-4 V, and transconductance of 62 mS/mm. The maximum output power density reaches 815 mW/mm at 2 GHz, which is the highest reported value for diamond transistors measured at 2 GHz.

Original language	English
Title of host publication	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728102863
DOIs	https://doi.org/10.1109/EDSSC.2019.8754272
State	Published - Jun 2019
Event	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China Duration: 12 Jun 2019 → 14 Jun 2019

Publication series

Name	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Country/Territory	China
City	Xi'an
Period	12/06/19 → 14/06/19

Keywords

Diamond
Frequency
MOSFETs
Output power density

Access to Document

10.1109/EDSSC.2019.8754272

Cite this

Yu, C., Zhou, C., Guo, J., He, Z., Liu, Q., Gao, X., Zhang, X., Feng, Z., & Wang, H. (2019). RF performance of hydrogenated single crystal diamond MOSFETs. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 Article 8754272 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8754272

@inproceedings{02593ed376ee495188916de08822571b,

title = "RF performance of hydrogenated single crystal diamond MOSFETs",

abstract = "Hydrogenated diamond MOSFETs with gate length of 350 nm are fabricated by a self-aligned process on (001)-oriented single crystal diamond substrate. The hydrogen-terminated diamond MOSFETs show maximum drain current density of 233 mA/mm at VGS=-4 V, and transconductance of 62 mS/mm. The maximum output power density reaches 815 mW/mm at 2 GHz, which is the highest reported value for diamond transistors measured at 2 GHz.",

keywords = "Diamond, Frequency, MOSFETs, Output power density",

author = "Cui Yu and Chuangjie Zhou and Jianchao Guo and Zezhao He and Qingbin Liu and Xuedong Gao and Xiongwen Zhang and Zhihong Feng and Hongxing Wang",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",

year = "2019",

month = jun,

doi = "10.1109/EDSSC.2019.8754272",

language = "英语",

series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

}

Yu, C, Zhou, C, Guo, J, He, Z, Liu, Q, Gao, X, Zhang, X, Feng, Z & Wang, H 2019, RF performance of hydrogenated single crystal diamond MOSFETs. in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019., 8754272, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 12/06/19. https://doi.org/10.1109/EDSSC.2019.8754272

RF performance of hydrogenated single crystal diamond MOSFETs. / Yu, Cui; Zhou, Chuangjie; Guo, Jianchao et al.
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8754272 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - RF performance of hydrogenated single crystal diamond MOSFETs

AU - Yu, Cui

AU - Zhou, Chuangjie

AU - Guo, Jianchao

AU - He, Zezhao

AU - Liu, Qingbin

AU - Gao, Xuedong

AU - Zhang, Xiongwen

AU - Feng, Zhihong

AU - Wang, Hongxing

PY - 2019/6

Y1 - 2019/6

N2 - Hydrogenated diamond MOSFETs with gate length of 350 nm are fabricated by a self-aligned process on (001)-oriented single crystal diamond substrate. The hydrogen-terminated diamond MOSFETs show maximum drain current density of 233 mA/mm at VGS=-4 V, and transconductance of 62 mS/mm. The maximum output power density reaches 815 mW/mm at 2 GHz, which is the highest reported value for diamond transistors measured at 2 GHz.

AB - Hydrogenated diamond MOSFETs with gate length of 350 nm are fabricated by a self-aligned process on (001)-oriented single crystal diamond substrate. The hydrogen-terminated diamond MOSFETs show maximum drain current density of 233 mA/mm at VGS=-4 V, and transconductance of 62 mS/mm. The maximum output power density reaches 815 mW/mm at 2 GHz, which is the highest reported value for diamond transistors measured at 2 GHz.

KW - Diamond

KW - Frequency

KW - MOSFETs

KW - Output power density

UR - https://www.scopus.com/pages/publications/85070730133

U2 - 10.1109/EDSSC.2019.8754272

DO - 10.1109/EDSSC.2019.8754272

M3 - 会议稿件

AN - SCOPUS:85070730133

T3 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

BT - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Y2 - 12 June 2019 through 14 June 2019

ER -

Yu C, Zhou C, Guo J, He Z, Liu Q, Gao X et al. RF performance of hydrogenated single crystal diamond MOSFETs. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8754272. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). doi: 10.1109/EDSSC.2019.8754272

RF performance of hydrogenated single crystal diamond MOSFETs

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