Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO3microribbons

Bai Sun; Wenxi Zhao; Hongwei Li; Lujun Wei; Peng Chen

doi:10.1016/j.cplett.2014.08.071

Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO₃microribbons

Bai Sun
, Wenxi Zhao
, Hongwei Li
, Lujun Wei
, Peng Chen

Southwest University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO₃microribbons with width of 2 μm and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO₃microribbons, which displays a low operation voltage (≤2 V) and long data retention (over 5 months).

Original language	English
Pages (from-to)	100-103
Number of pages	4
Journal	Chemical Physics Letters
Volume	613
DOIs	https://doi.org/10.1016/j.cplett.2014.08.071
State	Published - 3 Oct 2014
Externally published	Yes

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10.1016/j.cplett.2014.08.071

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title = "Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO3microribbons",

abstract = "Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO3microribbons with width of 2 μm and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO3microribbons, which displays a low operation voltage (≤2 V) and long data retention (over 5 months).",

author = "Bai Sun and Wenxi Zhao and Hongwei Li and Lujun Wei and Peng Chen",

year = "2014",

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T1 - Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO3microribbons

AU - Sun, Bai

AU - Zhao, Wenxi

AU - Li, Hongwei

AU - Wei, Lujun

AU - Chen, Peng

PY - 2014/10/3

Y1 - 2014/10/3

N2 - Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO3microribbons with width of 2 μm and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO3microribbons, which displays a low operation voltage (≤2 V) and long data retention (over 5 months).

AB - Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO3microribbons with width of 2 μm and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO3microribbons, which displays a low operation voltage (≤2 V) and long data retention (over 5 months).

UR - https://www.scopus.com/pages/publications/84907262486

U2 - 10.1016/j.cplett.2014.08.071

DO - 10.1016/j.cplett.2014.08.071

M3 - 文章

AN - SCOPUS:84907262486

SN - 0009-2614

VL - 613

SP - 100

EP - 103

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO₃microribbons

Abstract

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