Retraction:Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

Bai Sun; Chang Ming Li

doi:10.1039/c4cp04901b

Retraction:Light-controlled resistive switching memory of multiferroic BiMnO₃ nanowire arrays

Bai Sun
, Chang Ming Li

Southwest University

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

A multiferroic BiMnO₃ nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO₃/Ti structure at room temperature.

Original language	English
Pages (from-to)	6718-6721
Number of pages	4
Journal	Physical Chemistry Chemical Physics
Volume	17
Issue number	10
DOIs	https://doi.org/10.1039/c4cp04901b
State	Published - 14 Mar 2015
Externally published	Yes

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title = "Retraction:Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays",

abstract = "A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.",

author = "Bai Sun and Li, \{Chang Ming\}",

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AU - Sun, Bai

AU - Li, Chang Ming

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PY - 2015/3/14

Y1 - 2015/3/14

N2 - A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.

AB - A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.

UR - https://www.scopus.com/pages/publications/84923882197

U2 - 10.1039/c4cp04901b

DO - 10.1039/c4cp04901b

M3 - 文章

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JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 10

ER -

Retraction:Light-controlled resistive switching memory of multiferroic BiMnO₃ nanowire arrays

Abstract

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