Resistive switching memory of single BiMnO3+δ nanorods

Yongming Yan; Bai Sun; De Jian Ma

doi:10.1007/s10854-015-3782-9

Resistive switching memory of single BiMnO_3+δ nanorods

Yongming Yan
, Bai Sun
, De Jian Ma

Hunan University
Southwest University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this work, BiMnO_3+δ nanorods were prepared by an improved hydrothermal process. Further, we demonstrate the bipolar resistive switching memory behavior of single BiMnO_3+δ nanorods. The physical model of conducting filament formation due to the diffusion of Ag ions along the BiMnO_3+δ nanorods under electric field has been suggested to explain the bipolar resistive switching behavior. This study is useful for developing the nonvolatile memory technology in nanoscale.

Original language	English
Pages (from-to)	512-516
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	27
Issue number	1
DOIs	https://doi.org/10.1007/s10854-015-3782-9
State	Published - 1 Jan 2016
Externally published	Yes

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abstract = "In this work, BiMnO3+δ nanorods were prepared by an improved hydrothermal process. Further, we demonstrate the bipolar resistive switching memory behavior of single BiMnO3+δ nanorods. The physical model of conducting filament formation due to the diffusion of Ag ions along the BiMnO3+δ nanorods under electric field has been suggested to explain the bipolar resistive switching behavior. This study is useful for developing the nonvolatile memory technology in nanoscale.",

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AB - In this work, BiMnO3+δ nanorods were prepared by an improved hydrothermal process. Further, we demonstrate the bipolar resistive switching memory behavior of single BiMnO3+δ nanorods. The physical model of conducting filament formation due to the diffusion of Ag ions along the BiMnO3+δ nanorods under electric field has been suggested to explain the bipolar resistive switching behavior. This study is useful for developing the nonvolatile memory technology in nanoscale.

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Resistive switching memory of single BiMnO_3+δ nanorods

Abstract

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