Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

Guangdong Zhou; Bai Sun; Zhijun Ren; Lidan Wang; Cunyun Xu; Bo Wu; Ping Li; Yanqing Yao; Shukai Duan

doi:10.1039/c9cc04069b

Resistive switching behaviors and memory logic functions in single MnO_x nanorod modulated by moisture

Guangdong Zhou
, Bai Sun
, Zhijun Ren
, Lidan Wang
, Cunyun Xu
, Bo Wu
, Ping Li
, Yanqing Yao
, Shukai Duan

Guizhou Institute of Technology
Southwest University
Southwest Jiaotong University
Zunyi Normal University

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

A device with the lateral structure of AgMnO_xAg was developed using a single MnO_x nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

Original language	English
Pages (from-to)	9915-9918
Number of pages	4
Journal	Chemical Communications
Volume	55
Issue number	67
DOIs	https://doi.org/10.1039/c9cc04069b
State	Published - 2019
Externally published	Yes

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10.1039/c9cc04069b

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title = "Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture",

abstract = "A device with the lateral structure of AgMnOxAg was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.",

author = "Guangdong Zhou and Bai Sun and Zhijun Ren and Lidan Wang and Cunyun Xu and Bo Wu and Ping Li and Yanqing Yao and Shukai Duan",

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T1 - Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

AU - Zhou, Guangdong

AU - Sun, Bai

AU - Ren, Zhijun

AU - Wang, Lidan

AU - Xu, Cunyun

AU - Wu, Bo

AU - Li, Ping

AU - Yao, Yanqing

AU - Duan, Shukai

PY - 2019

Y1 - 2019

N2 - A device with the lateral structure of AgMnOxAg was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

AB - A device with the lateral structure of AgMnOxAg was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

UR - https://www.scopus.com/pages/publications/85070821851

U2 - 10.1039/c9cc04069b

DO - 10.1039/c9cc04069b

M3 - 文章

C2 - 31334511

AN - SCOPUS:85070821851

SN - 1359-7345

VL - 55

SP - 9915

EP - 9918

JO - Chemical Communications

JF - Chemical Communications

IS - 67

ER -

Resistive switching behaviors and memory logic functions in single MnO_x nanorod modulated by moisture

Abstract

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