Resistive switching behavior in Pt/YSZ/Nb:SrTiO3 heterostructure for nonvolatile multilevel memories

Yongdan Zhu; Meiya Li; Jun Liu; Zhongqiang Hu; Qiangwen Wang; Yuan Zhang; Maocai Wei; Cheng Hu

doi:10.1016/j.jallcom.2014.05.183

Resistive switching behavior in Pt/YSZ/Nb:SrTiO₃ heterostructure for nonvolatile multilevel memories

Yongdan Zhu
, Meiya Li
, Jun Liu
, Zhongqiang Hu
, Qiangwen Wang
, Yuan Zhang
, Maocai Wei
, Cheng Hu

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The yittra-stablized zirconia (YSZ) thin film was deposited on a Nb:SrTiO₃ (NSTO) substrate by pulsed laser deposition to form a Pt/YSZ/NSTO heterostructure device. This device exhibits high resistive switching ratio of 10⁵ at a read voltage of -0.1 V after applied +3 V/-4 V pulse voltages. Moreover, the resistance states could be reversibly switched among multilevel resistance states by changing the magnitude of Set or Reset pulse voltages, which shows potential application in multilevel nonvolatile memory devices. The RS mechanism of the device could be attributed to the modulation of YSZ/NSTO Schottky-like junction depletion, which is caused by the carrier injection-trapped/detrapped process under the applied electric field.

Original language	English
Pages (from-to)	30-33
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	612
DOIs	https://doi.org/10.1016/j.jallcom.2014.05.183
State	Published - 5 Nov 2014
Externally published	Yes

Keywords

Bipolar resistive switching
Multilevel memories
Trap/detrap modulating
YSZ heterostructure

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10.1016/j.jallcom.2014.05.183

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@article{2122b797e1204dbfbee833189da03135,

title = "Resistive switching behavior in Pt/YSZ/Nb:SrTiO3 heterostructure for nonvolatile multilevel memories",

abstract = "The yittra-stablized zirconia (YSZ) thin film was deposited on a Nb:SrTiO3 (NSTO) substrate by pulsed laser deposition to form a Pt/YSZ/NSTO heterostructure device. This device exhibits high resistive switching ratio of 105 at a read voltage of -0.1 V after applied +3 V/-4 V pulse voltages. Moreover, the resistance states could be reversibly switched among multilevel resistance states by changing the magnitude of Set or Reset pulse voltages, which shows potential application in multilevel nonvolatile memory devices. The RS mechanism of the device could be attributed to the modulation of YSZ/NSTO Schottky-like junction depletion, which is caused by the carrier injection-trapped/detrapped process under the applied electric field.",

keywords = "Bipolar resistive switching, Multilevel memories, Trap/detrap modulating, YSZ heterostructure",

author = "Yongdan Zhu and Meiya Li and Jun Liu and Zhongqiang Hu and Qiangwen Wang and Yuan Zhang and Maocai Wei and Cheng Hu",

year = "2014",

month = nov,

day = "5",

doi = "10.1016/j.jallcom.2014.05.183",

language = "英语",

volume = "612",

pages = "30--33",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Resistive switching behavior in Pt/YSZ/Nb:SrTiO3 heterostructure for nonvolatile multilevel memories

AU - Zhu, Yongdan

AU - Li, Meiya

AU - Liu, Jun

AU - Hu, Zhongqiang

AU - Wang, Qiangwen

AU - Zhang, Yuan

AU - Wei, Maocai

AU - Hu, Cheng

PY - 2014/11/5

Y1 - 2014/11/5

N2 - The yittra-stablized zirconia (YSZ) thin film was deposited on a Nb:SrTiO3 (NSTO) substrate by pulsed laser deposition to form a Pt/YSZ/NSTO heterostructure device. This device exhibits high resistive switching ratio of 105 at a read voltage of -0.1 V after applied +3 V/-4 V pulse voltages. Moreover, the resistance states could be reversibly switched among multilevel resistance states by changing the magnitude of Set or Reset pulse voltages, which shows potential application in multilevel nonvolatile memory devices. The RS mechanism of the device could be attributed to the modulation of YSZ/NSTO Schottky-like junction depletion, which is caused by the carrier injection-trapped/detrapped process under the applied electric field.

AB - The yittra-stablized zirconia (YSZ) thin film was deposited on a Nb:SrTiO3 (NSTO) substrate by pulsed laser deposition to form a Pt/YSZ/NSTO heterostructure device. This device exhibits high resistive switching ratio of 105 at a read voltage of -0.1 V after applied +3 V/-4 V pulse voltages. Moreover, the resistance states could be reversibly switched among multilevel resistance states by changing the magnitude of Set or Reset pulse voltages, which shows potential application in multilevel nonvolatile memory devices. The RS mechanism of the device could be attributed to the modulation of YSZ/NSTO Schottky-like junction depletion, which is caused by the carrier injection-trapped/detrapped process under the applied electric field.

KW - Bipolar resistive switching

KW - Multilevel memories

KW - Trap/detrap modulating

KW - YSZ heterostructure

UR - https://www.scopus.com/pages/publications/84902676548

U2 - 10.1016/j.jallcom.2014.05.183

DO - 10.1016/j.jallcom.2014.05.183

M3 - 文章

AN - SCOPUS:84902676548

SN - 0925-8388

VL - 612

SP - 30

EP - 33

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Resistive switching behavior in Pt/YSZ/Nb:SrTiO₃ heterostructure for nonvolatile multilevel memories

Abstract

Keywords

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