Resistive switching behavior in α-In₂Se₃ nanoflakes modulated by ferroelectric polarization and interface defects

Resistive switching devices based on ferroelectric two-dimensional (2D) van der Waals (vdW) nanomaterials may display simple structures, high density, high speed, and low power consumption, and can be used in flexible electronics and highly integrated devices. However, only a few studies about the in-plane (IP) resistive switching behavior of ferroelectric 2D vdW nanomaterials have been reported because it is very hard to achieve asymmetric barriers only by tuning the IP polarization directions when the electrodes of the planar device are all of the same type. In the current work, we developed a planar device based on an α-In₂Se₃ nanoflake, in which the IP/OOP (out-of-plane) polarization, free carriers and oxygen vacancies in SiO₂ contribute to the resistive switching behavior of the device. This behavior of the device was shown to be affected by exposure to light, and the photoelectric performance was also investigated when the device was in the OFF state. The demonstration of this planar resistive switching device may promote the further development of resistive devices based on 2D vdW nanomaterials, and provide great inspiration for the development of new kinds of transistors.