Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure

Jiagang Wu; Xiaojie Lou; Yang Wang; John Wang

doi:10.1149/1.3264093

Resistive hysteresis and diodelike behavior of BiFeO₃ /ZnO heterostructure

Jiagang Wu
, Xiaojie Lou
, Yang Wang
, John Wang

National University of Singapore

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Bilayered BiFeO₃ /ZnO thin films, which were grown on the SrRuO₃ -buffered MgO(100) substrate by off-axis radio frequency magnetron sputtering, are investigated for their current-voltage relationships at varying voltages and temperatures. A resistive hysteresis and a diodelike behavior are observed for the bilayered BiFeO₃ /ZnO thin films. The resistive hysteresis and the rectification ratio are enhanced with increasing electrical field and temperature. The observed behavior arises from the interfacial depletion layer and ferroelectric switching, where the charge coupling between the semiconducting ZnO and the ferroelectric BiFeO₃ layers occurs.

Original language	English
Pages (from-to)	G9-G12
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1149/1.3264093
State	Published - 2010
Externally published	Yes

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title = "Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure",

abstract = "Bilayered BiFeO3 /ZnO thin films, which were grown on the SrRuO3 -buffered MgO(100) substrate by off-axis radio frequency magnetron sputtering, are investigated for their current-voltage relationships at varying voltages and temperatures. A resistive hysteresis and a diodelike behavior are observed for the bilayered BiFeO3 /ZnO thin films. The resistive hysteresis and the rectification ratio are enhanced with increasing electrical field and temperature. The observed behavior arises from the interfacial depletion layer and ferroelectric switching, where the charge coupling between the semiconducting ZnO and the ferroelectric BiFeO3 layers occurs.",

author = "Jiagang Wu and Xiaojie Lou and Yang Wang and John Wang",

year = "2010",

doi = "10.1149/1.3264093",

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journal = "Electrochemical and Solid-State Letters",

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T1 - Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure

AU - Wu, Jiagang

AU - Lou, Xiaojie

AU - Wang, Yang

AU - Wang, John

PY - 2010

Y1 - 2010

N2 - Bilayered BiFeO3 /ZnO thin films, which were grown on the SrRuO3 -buffered MgO(100) substrate by off-axis radio frequency magnetron sputtering, are investigated for their current-voltage relationships at varying voltages and temperatures. A resistive hysteresis and a diodelike behavior are observed for the bilayered BiFeO3 /ZnO thin films. The resistive hysteresis and the rectification ratio are enhanced with increasing electrical field and temperature. The observed behavior arises from the interfacial depletion layer and ferroelectric switching, where the charge coupling between the semiconducting ZnO and the ferroelectric BiFeO3 layers occurs.

AB - Bilayered BiFeO3 /ZnO thin films, which were grown on the SrRuO3 -buffered MgO(100) substrate by off-axis radio frequency magnetron sputtering, are investigated for their current-voltage relationships at varying voltages and temperatures. A resistive hysteresis and a diodelike behavior are observed for the bilayered BiFeO3 /ZnO thin films. The resistive hysteresis and the rectification ratio are enhanced with increasing electrical field and temperature. The observed behavior arises from the interfacial depletion layer and ferroelectric switching, where the charge coupling between the semiconducting ZnO and the ferroelectric BiFeO3 layers occurs.

UR - https://www.scopus.com/pages/publications/74249103898

U2 - 10.1149/1.3264093

DO - 10.1149/1.3264093

M3 - 文章

AN - SCOPUS:74249103898

SN - 1099-0062

VL - 13

SP - G9-G12

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Resistive hysteresis and diodelike behavior of BiFeO₃ /ZnO heterostructure

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