Research on control and calculation of resist curing inducted by UV light in step imprint lithography

It caused the two basic pattern transferring defects in nanoimprint lithography process that the resist curing degree after UV exposure was difficult to control. Through analysis of the spectrum matching performance between UV exposure lamp and the resist it was known that the effective light to the resist curing was the light whose wavelength was 365 nm. By analyzing the UV light transmission during the UV exposure, a model of the UV light intensity distribution in the resist was established. In order to describe the resist curing degree after UV exposure, the model of the viscosity distribution in the resist was also established. By the analysis of the effect of the resist absorption to the light whose wavelength was 365 nm and the resist thickness to uniformity of the UV light distribution in the resist, it was concluded that the distribution of the protrusions in the resist was more sensitive to the resist absorption and resist thickness.