@inproceedings{6ca144fe12064b4f94d2b2e7d876dffc,
title = "Research on 3300V IGBTs' switching characteristics and design the gate drive circuit",
abstract = "In this work, 3300V IGBT switching characteristics are analyzed. Based on the experimental results, influences of the gate resistor and the external capacitor connected between the gate and emitter are studied. How the DC voltage and load current affect the switching transients is also analyzed. Besides, the gate drive circuit for 3300V IGBTs is designed. To improve the switching transient, a novel circuit of a transient voltage suppressor (TVS) with a capacitor is proposed and applied while experimental results show that the circuit has a good performance. Furthermore, the short-circuit test is done to verify the short-circuit protection of the gate drive.",
keywords = "3300V IGBT, Gate drive circuit, Short-circuit protection, Switching characteristic, Switching transient",
author = "Jun Huang and Yue Wang and Jingyu Lei and Ming Li and Wanjun Lei",
year = "2012",
doi = "10.1109/APEC.2012.6165813",
language = "英语",
isbn = "9781457712159",
series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",
pages = "157--161",
booktitle = "APEC 2012 - 27th Annual IEEE Applied Power Electronics Conference and Exposition",
note = "27th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2012 ; Conference date: 05-02-2012 Through 09-02-2012",
}