Research of active EMI filter for Gallium Nitride based high frequency resonant converter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

With the increasing switching frequency of Gallium Nitride (GaN) based converters, their EMI issues become more and more serious. In this paper, a novel active EMI filtering method is proposed for a high frequency LLC resonant converter. Firstly, a high frequency model of the GaN based converter is given. Common mode EMI coupling paths are analyzed in detail. Secondly, an improved two-stage active EMI filter topology is proposed. It has the advantages of increasing insertion loss, simplifying the structure and reducing the cost effectively. Finally, a GaN based 1MHz high frequency resonant converter as well as the proposed active EMI filter prototype is built. Simulation and experimental results demonstrate the efficiency of the proposed active filtering method.

Original languageEnglish
Title of host publication2016 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages491-494
Number of pages4
ISBN (Electronic)9781467394949
DOIs
StatePublished - 26 Jul 2016
Event7th Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2016 - Shenzhen, China
Duration: 17 May 201621 May 2016

Publication series

Name2016 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2016

Conference

Conference7th Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2016
Country/TerritoryChina
CityShenzhen
Period17/05/1621/05/16

Keywords

  • CM interference
  • Gallium Nitride
  • active filter
  • resonant converter

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